DMN601DWKQ-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

300 mA

Rds On - Drain-Source Resistance:

3 Ohms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

304 pC

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

200 mW

Configuration:

Dual

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

80 ms

Fall Time:

9.9 ns

Product Type:

MOSFET

Rise Time:

3.4 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15.7 ns

Typical Turn-On Delay Time:

3.9 ns

Unit Weight:

0.000212 oz

Tags

DMN601DW, DMN601D, DMN601, DMN60, DMN6, DMN