PartNumber | DMN6013LFG-7 | DMN6013LFG-13 | DMN6013LFGQ-13 |
Description | MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF | MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF | MOSFET MOSFET BVDSS: 41V-60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerDI3333-8 | PowerDI3333-8 | PowerDI3333-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 10.3 A | 10.3 A | - |
Rds On Drain Source Resistance | 12.3 mOhms | 12.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 26.6 nC | 26.6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1 W | 1 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Series | DMN60 | DMN60 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 11.7 ns | 11.7 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9.9 ns | 9.9 ns | - |
Factory Pack Quantity | 2000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27.6 ns | 27.6 ns | - |
Typical Turn On Delay Time | 6.2 ns | 6.2 ns | - |
Unit Weight | 0.002540 oz | 0.002540 oz | - |
Qualification | - | - | AEC-Q101 |