FDFME2P823ZT

Mfr. #:: FDFME2P823ZT
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
Lifecycle:: New from this manufacturer.
Datasheet:: FDFME2P823ZT Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Packaging: Reel

Unit-Weight: 0.000889 oz

Mounting-Style: SMD/SMT

Package-Case: microFET-6

Technology: Si

Number-of-Channels: 2 Channel

Configuration: Single with Schottky Diode

Transistor-Type: 2 P-Channel

Pd-Power-Dissipation: 1.3 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 16 ns

Rise-Time: 4.8 ns

Vgs-Gate-Source-Voltage: +/- 8 V

Id-Continuous-Drain-Current: - 2.3 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 0.6 V

Rds-On-Drain-Source-Resistance: 95 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 33 ns

Typical-Turn-On-Delay-Time: 4.7 ns

Qg-Gate-Charge: 5.5 nC

Forward-Transconductance-Min: 7 S

Tags: FDFME, FDFM, FDF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME2P823ZT Description

***p One Stop Global: Trans MOSFET P-CH 20V 2.3A 6-Pin MicroFET T/R

***nell: MOSFET, P CH, 20V, 2.6A, 6MICROFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

Part #	Mfg.	Description	Stock	Price
FDFME2P823ZT DISTI # FDFME2P823ZTTR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTCT-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTDKR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME2P823ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
FDFME2P823ZT DISTI # 512-FDFME2P823ZT	ON Semiconductor	MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS: Compliant	0

FDFME2P823ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes