IRFS3206TRRPBF

IRFS3206TRRPBF
Mfr. #:
IRFS3206TRRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 60V 210A 3mOhm 120nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFS3206TRRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3206TRRPBF DatasheetIRFS3206TRRPBF Datasheet (P4-P6)IRFS3206TRRPBF Datasheet (P7-P9)IRFS3206TRRPBF Datasheet (P10-P12)
ECAD Model:
More Information:
IRFS3206TRRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
210 A
Rds On - Drain-Source Resistance:
2.4 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
120 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
210 S
Fall Time:
83 ns
Product Type:
MOSFET
Rise Time:
82 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
SP001573508
Unit Weight:
0.139332 oz
Tags
IRFS3206T, IRFS3206, IRFS32, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ied Electronics & Automation
MOSFET; N Ch.; 60V; 210A; 3 MOHM; 120 NC QG; D2-PAK; Pb-Free
***roFlash
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 210 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 2.4 / Gate-Source Voltage V = 20 / Fall Time ns = 83 / Rise Time ns = 82 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 300
***nell
MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 210A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Base Number: 3206; Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 840A; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
Part # Mfg. Description Stock Price
IRFS3206TRRPBF
DISTI # 30726354
Infineon Technologies AGTrans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R3200
  • 800:$1.4304
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 60V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1817In Stock
  • 100:$2.4678
  • 10:$3.0100
  • 1:$3.3700
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 60V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1817In Stock
  • 100:$2.4678
  • 10:$3.0100
  • 1:$3.3700
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 60V 120A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
1600In Stock
  • 800:$1.7531
IRFS3206TRRPBF
DISTI # C1S322000494828
Infineon Technologies AGTrans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
794
  • 250:$1.4302
  • 100:$1.5893
  • 25:$1.8131
  • 10:$1.9987
  • 1:$2.2794
IRFS3206TRRPBF
DISTI # C1S322000494819
Infineon Technologies AGTrans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
3200
  • 2400:$1.1900
  • 1600:$1.2900
  • 800:$1.6800
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBF
Infineon Technologies AGTrans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: IRFS3206TRRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape
Americas - 0
  • 1:$2.1900
  • 8:$1.8900
  • 20:$1.7900
  • 40:$1.6900
  • 100:$1.4900
  • 200:$1.3900
  • 400:$1.1900
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBF
Infineon Technologies AGTrans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS3206TRRPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
    IRFS3206TRRPBF
    DISTI # IRFS3206TRRPBF
    Infineon Technologies AGTrans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3206TRRPBF)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 800:$1.2239
    • 1600:$1.1799
    • 3200:$1.1369
    • 4800:$1.0989
    • 8000:$1.0799
    IRFS3206TRRPBF.
    DISTI # 27AC6839
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1:$1.2300
    • 1600:$1.1800
    • 3200:$1.1400
    • 4800:$1.1000
    • 8000:$1.0800
    IRFS3206TRRPBF
    DISTI # 70019022
    Infineon Technologies AGIRFS3206TRRPBF N-channel MOSFET Transistor,210 A,60 V,3-Pin D2PAK
    RoHS: Compliant
    0
    • 800:$4.5000
    IRFS3206TRRPBF
    DISTI # 942-IRFS3206TRRPBF
    Infineon Technologies AGMOSFET MOSFT 60V 210A 3mOhm 120nC Qg
    RoHS: Compliant
    1129
    • 1:$2.8200
    • 10:$2.4000
    • 100:$2.0800
    • 250:$1.9700
    • 500:$1.7700
    IRFS3206TRRPBFInfineon Technologies AGSingle N-Channel 60V 3 mOhm 120 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant
    800Reel
    • 800:$1.3100
    IRFS3206TRRPBF
    DISTI # 2725981
    Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263AB
    RoHS: Compliant
    0
    • 1:$5.3800
    • 10:$4.8000
    • 100:$3.9400
    IRFS3206TRRPBF
    DISTI # 2725981
    Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263AB
    RoHS: Compliant
    0
    • 1:£2.1000
    • 10:£1.7500
    • 100:£1.6000
    • 250:£1.5000
    • 500:£1.1400
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IRFS3206TRRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.81
    $2.81
    10
    $2.39
    $23.90
    100
    $2.07
    $207.00
    250
    $1.96
    $490.00
    500
    $1.76
    $880.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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