PartNumber | IRFS3206TRRPBF | IRFS3207PBF | IRFS3206PBF |
Description | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | MOSFET N-CH 60V 120A D2PAK |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 75 V | - |
Id Continuous Drain Current | 210 A | 180 A | - |
Rds On Drain Source Resistance | 2.4 mOhms | 4.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 120 nC | 180 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 300 W | 330 W | - |
Configuration | Single | Single | Single |
Packaging | Reel | Tube | Tube |
Height | 4.4 mm | 2.3 mm | - |
Length | 10 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 6.22 mm | - |
Brand | Infineon / IR | Infineon Technologies | - |
Forward Transconductance Min | 210 S | - | - |
Fall Time | 83 ns | 74 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 82 ns | 120 ns | - |
Factory Pack Quantity | 800 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 55 ns | 68 ns | - |
Typical Turn On Delay Time | 19 ns | 29 ns | - |
Part # Aliases | SP001573508 | SP001550104 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Channel Mode | - | Enhancement | - |
Type | - | HEXFET Power MOSFET | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 300 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 210 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 2.4 mOhms |
Qg Gate Charge | - | - | 120 nC |