IRFS3207ZTRRPBF

Mfr. #:: IRFS3207ZTRRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRFS3207ZTRRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 170 A

Rds On - Drain-Source Resistance:: 4.1 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Qg - Gate Charge:: 170 nC

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 280 S

Fall Time:: 68 ns

Product Type:: MOSFET

Rise Time:: 68 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Part # Aliases:: SP001565050

Unit Weight:: 0.139332 oz

Tags: IRFS3207ZT, IRFS3207Z, IRFS3207, IRFS32, IRFS3, IRFS, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFS3207ZTRRPBF Description

***ure Electronics: Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube

***(Formerly Allied Electronics): MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free

***nell: MOSFET, N, 75V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip

***(Formerly Allied Electronics): Transistor MOSFET N-ch 75V 120A D2PAK

***ical: Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***nell: MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***ical: Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 75 V 3.1 mOhm 117 nC OptiMOS Power Mosfet - D2PAK

***ineon: The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

***ark: MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

***(Formerly Allied Electronics): Transistor MOSFET N-ch 60V 120A D2PAK

***ical: Trans MOSFET N-CH Si 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; Enhanced dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***nell: MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***icroelectronics: N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

***ical: Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) H2PAK T/R

***icroelectronics SCT: Power MOSFETs, 80V, 120A, H2PAK-2, Tape and Reel

***ponent Sense: TRA FET POW 55V 75A 4MOHM D2PAK3

***el Electronic: CAP CERAMIC DISK RDL LONG LEADS

***Yang: MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ 90 A STripFET F7 Power MOSFET in H

***ical: Trans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) H2PAK T/R

***r Electronics: Power Field-Effect Transistor, 90A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Automotive Power Discrete, 80V, 90A, H2PAK-2, Tape and Reel

***ical: Trans MOSFET N-CH 80V 110A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ

***r Electronics: Power Field-Effect Transistor, 110A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***icroelectronics: N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

***r Electronics: Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 80 V 64 A 4.3 mOhm Flange Mount STripFET F7 Power Mosfet - TO-220FP

***hard Electronics: VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V

***roFlash: SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263

***ical: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited

Market price

Part #	Mfg.	Description	Stock	Price
IRFS3207ZTRRPBF DISTI # V72:2272_13891541	Infineon Technologies AG	Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	719	500:$1.5145 250:$1.6635 100:$1.7571 25:$1.9836 10:$2.0063 1:$2.2932
IRFS3207ZTRRPBF DISTI # IRFS3207ZTRRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5829In Stock	100:$2.4214 10:$2.9530 1:$3.3100
IRFS3207ZTRRPBF DISTI # IRFS3207ZTRRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5829In Stock	100:$2.4214 10:$2.9530 1:$3.3100
IRFS3207ZTRRPBF DISTI # IRFS3207ZTRRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	5600In Stock	800:$1.7201
IRFS3207ZTRRPBF DISTI # 28997281	Infineon Technologies AG	Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	800:$1.7264
IRFS3207ZTRRPBF DISTI # 31274461	Infineon Technologies AG	Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	719	500:$1.5145 250:$1.6635 100:$1.7571 25:$1.9836 10:$2.0063 6:$2.2932
IRFS3207ZTRRPBF DISTI # 49AC0315	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	139	1:$2.7600 10:$2.3500 25:$2.2500 50:$2.1400 100:$2.0400 250:$1.9300 500:$1.7400
IRFS3207ZTRRPBF DISTI # 942-IRFS3207ZTRRPBF	Infineon Technologies AG	MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg RoHS: Compliant	1023	1:$2.7600 10:$2.3500 100:$2.0400 250:$1.9300 500:$1.7400
IRFS3207ZTRRPBF	International Rectifier		676
IRFS3207ZTRRPBF DISTI # 2839493	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO-263 RoHS: Compliant	256	1:£2.3600 10:£1.7800 100:£1.5400 250:£1.4600 500:£1.1000
IRFS3207ZTRRPBF DISTI # 2839493	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO-263 RoHS: Compliant	139	1:$3.3800 10:$3.1600 100:$2.7900 250:$2.6400 500:$2.5000 1000:$2.3800
IRFS3207ZTRRPBF DISTI # C1S322000494891	Infineon Technologies AG	Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	800	800:$1.4700
IRFS3207ZTRRPBF DISTI # C1S322000689374	Infineon Technologies AG	MOSFETs RoHS: Compliant	719	250:$1.6635 100:$1.7571 25:$1.9836 10:$2.0063 1:$2.2932

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IRFS3207ZTRRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes