ZXMC3F31DN8TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

7.3 A, 5.3 A

Rds On - Drain-Source Resistance:

24 mOhms, 80 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V, 3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

12.9 nC, 12.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.25 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

ZXMC3

Transistor Type:

1 N-Channel, 1 P-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

16.5 S, 14 S

Fall Time:

8 ns, 21 ns

Product Type:

MOSFET

Rise Time:

3.3 ns, 3 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16 ns, 30 ns

Typical Turn-On Delay Time:

2.9 ns, 1.9 ns

Unit Weight:

0.002610 oz

Tags

ZXMC3F31DN, ZXMC3F, ZXMC3, ZXMC, ZXM