ZXMC3F31DN8TA

P1-P3 P4-P6 P7-P9 P10-P11

ZXMC3F31DN8

Q1 N-channel electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-Source breakdown

voltage

V

(BR)DSS

30 V

I

D

= 250μA, V

GS

=0V

Zero Gate voltage Drain

current

I

DSS

0.5 µA

V

DS

=30V, V

GS

=0V

Gate-Body leakage

I

GSS

100 nA

V

GS

=±20V, V

DS

=0V

Gate-Source threshold

voltage

V

GS(th)

1.0 3.0 V

I

D

= 250μA, V

DS

=V

GS

Static Drain-Source

on-state resistance

(

*

)

R

DS(on)

0.024

0.039

Ω

V

GS

= 10V, I

D

= 7.0A

V

GS

= 4.5, I

D

= 6.0A

Forward

Transconductance

(

*

) (†)

g

fs

16.5

S

V

DS

= 15V, I

D

= 7.0A

Dynamic

(†)

Input capacitance

C

iss

608

pF

Output capacitance

C

oss

132 pF

Reverse transfer

capacitance

C

rss

72 pF

V

DS

= 15V, V

GS

=0V

f=1MHz

Switching

(‡) (†)

Turn-on-delay time

t

d(on)

2.9 ns

Rise time

t

r

3.3 ns

Turn-off delay time

t

d(off)

16 ns

Fall time

t

f

8 ns

V

DD

= 15V, V

GS

=10V

I

D

= 1A

R

G

≅ 6.0Ω,

Total Gate charge

Q

g

12.9 nC

Gate-Source charge

Q

gs

2.5 nC

Gate-Drain charge

Q

gd

2.52 nC

V

DS

= 15V, V

GS

= 10V

I

D

= 7A

Source–Drain diode

Diode forward voltage

(

*

)

V

SD

0.82 1.2 V

I

S

= 1.7A,V

GS

=0V

Reverse recovery time

(‡)

t

rr

12 ns

Reverse recovery charge

(‡)

Q

rr

4.8 nC

I

S

= 2.2A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

Issue 1 - September 2008 4

© Diodes Incorporated 2008

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www.diodes.com

ZXMC3F31DN8

Q1 Typical characteristics

0.1 1 10

0.01

0.1

1

10

0.1 1 10

0.01

0.1

1

10

234

0.1

1

10

-50 0 50 100 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01 0.1 1 10

0.01

0.1

1

10

100

1000

0.2 0.4 0.6 0.8 1.0

1E-3

0.01

0.1

1

10

4V

5V

10V

3.5V

2.5V

Output Characteristics

T = 25°C

3V

V

GS

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

10V

1.5V

2V

2.5V

4V

3.5V

3V

Output Characteristics

T = 150°C

V

GS

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

Typical Transfer Characteristics

V

DS

= 10V

T = 25°C

T = 150°C

I

D

Drain Current (A)

V

GS

Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

V

GS

= 10V

I

D

= 7A

V

GS( th)

V

GS

= V

DS

I

D

= 250uA

Normalised R

DS(on)

and V

GS(th)

Tj Junction Temperature (°C)

10V

3.5V

4V

3V

On-Resistance v Drain Current

T = 25°C

2.5V

4.5V

V

GS

R

DS(on)

Drain-Source On-Resistance (W)

I

D

Drain Current (A)

Vgs = -3V

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

V

SD

Source-Drain Voltage (V)

I

SD

Reverse Drain Current (A)

Issue 1 - September 2008 5

© Diodes Incorporated 2008

www.zetex.com

www.diodes.com

ZXMC3F31DN8

Q1 Typical characteristics –cntd.

110

0

100

200

300

400

500

600

700

800

900

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C Capacitance (pF)

V

DS

- Drain - Source Voltage (V)

01234567891011121314

0

1

2

3

4

5

6

7

8

9

10

I

D

= 7A

V

DS

= 15V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

V

GS

Gate-Source Voltage (V)

Test circuits

Issue 1 - September 2008 6

© Diodes Incorporated 2008

www.zetex.com

www.diodes.com

P1-P3 P4-P6 P7-P9 P10-P11

ZXMC3F31DN8TA

Mfr. #:

Buy ZXMC3F31DN8TA

Manufacturer:

Diodes Incorporated

Description:

MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate

Lifecycle:

New from this manufacturer.

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ZXMC3F31DN8TA