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IPB230N06L3G

IPB230N06L3G
Mfr. #:
IPB230N06L3G
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lifecycle:
New from this manufacturer.
Datasheet:
IPB230N06L3G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INF
Product Category
FETs - Single
Tags
IPB230N06L3G, IPB23, IPB2, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 60V 30A TO263-3
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ineon SCT
40V, N-Ch, 6.2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 40V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
***et Europe
Transistor MOSFET N-CH 40V 70A 3-Pin TO-263 T/R
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***et Europe
Trans MOSFET N-CH 40V 45A 3-Pin(2+Tab) TO-263 T/R
***o-Tech
MOSFET N-Ch 45A 40V OptiMOS-T2 TO263
***i-Key Marketplace
OPTLMOS N-CHANNEL POWER MOSFET
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ical
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) D2PAK T/R
***et
N-KANAL POWER MOS
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402
***nell
MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
MOSFET N-CH 30V 71A D2PAK
***Yang
TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***inecomponents.com
30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET
***et
TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***el Electronic
Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603
Part # Mfg. Description Stock Price
IPB230N06L3GATMA1
DISTI # IPB230N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB230N06L3GATMA1
    DISTI # IPB230N06L3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 60V 30A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB230N06L3GATMA1
      DISTI # IPB230N06L3GATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 60V 30A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB230N06L3 G
        DISTI # 726-IPB230N06L3G        		Infineon Technologies AGMOSFET N-Ch 200V 30A D2PAK-2
        RoHS: Compliant        		0
          IPB230N06L3GInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		1943
          • 1000:$0.3200
          • 500:$0.3300
          • 100:$0.3500
          • 25:$0.3600
          • 1:$0.3900
          IPB230N06L3 GInfineon Technologies AG 408
            Image Part # Description
            IPB230N06L3

            Mfr.#: IPB230N06L3

            OMO.#: OMO-IPB230N06L3-1190

            		 New and Original
            IPB230N06L3G

            Mfr.#: IPB230N06L3G

            OMO.#: OMO-IPB230N06L3G-1190

            		 Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
            IPB230N06L3GATMA1

            Mfr.#: IPB230N06L3GATMA1

            OMO.#: OMO-IPB230N06L3GATMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 60V 30A TO263-3
            IPB230N06L3 G

            Mfr.#: IPB230N06L3 G

            OMO.#: OMO-IPB230N06L3-G-126

            		 IGBT Transistors MOSFET N-Ch 200V 30A D2PAK-2
            Availability
            Stock:
            Available
            On Order:
            2000
            Enter Quantity:
            Current price of IPB230N06L3G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $0.48
            $0.48
            10
            $0.46
            $4.56
            100
            $0.43
            $43.20
            500
            $0.41
            $204.00
            1000
            $0.38
            $384.00
            Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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