HGTG20N60A4D

Mfr. #:: HGTG20N60A4D
Manufacturer:: ON Semiconductor
Description:: IGBT 600V 70A 290W TO247
Lifecycle:: New from this manufacturer.
Datasheet:: HGTG20N60A4D Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: IGBTs - Single

Series: -

Packaging: Tube

Part-Aliases: HGTG20N60A4D_NL

Unit-Weight: 0.225401 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247

Configuration: Single

Power-Max: 290W

Reverse-Recovery-Time-trr: 35ns

Current-Collector-Ic-Max: 70A

Voltage-Collector-Emitter-Breakdown-Max: 600V

IGBT-Type: -

Current-Collector-Pulsed-Icm: 280A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 20A

Switching-Energy: 105μJ (on), 150μJ (off)

Gate-Charge: 142nC

Td-on-off-25°C: 15ns/73ns

Test-Condition: 390V, 20A, 3 Ohm, 15V

Pd-Power-Dissipation: 290 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Collector-Emitter-Voltage-VCEO-Max: 600 V

Collector-Emitter-Saturation-Voltage: 1.8 V

Continuous-Collector-Current-at-25-C: 70 A

Gate-Emitter-Leakage-Current: +/- 250 nA

Maximum-Gate-Emitter-Voltage: +/- 20 V

Continuous-Collector-Current-Ic-Max: 70 A

Tags: HGTG20N60A4D, HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG20N60A4D Description

***p One Stop Global: Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 600V, SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE

***ure Electronics: HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247

***et: PWR IGBT 45A,600V,SMPS N-CH W/DIODE TO-247

***Components: TRANSISTOR IGBT N-CH 600V 70A TO247

***ark: Pt P To247 45A 600V Smps Rohs Compliant: Yes

***i-Key: IGBT N-CH SMPS 600V 70A TO247

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ

***Semiconductor: 600V, SMPS IGBT

***nell: IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4D; No. of Pins:3; Power, Pd:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Fall Typ:32ns; Time, Rise:12ns; Transistors, No. of:1

***rchild Semiconductor: The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

Part #	Mfg.	Description	Stock	Price
HGTG20N60A4D DISTI # V36:1790_06359605	ON Semiconductor	PT P TO247 45A 600V SMPS	1362	500:$2.4080 250:$2.8710 100:$3.3210 50:$3.6400 25:$3.7750 10:$3.7820 1:$4.3540
HGTG20N60A4D DISTI # V99:2348_06359605	ON Semiconductor	PT P TO247 45A 600V SMPS	450	500:$2.4080 250:$2.8710 100:$3.3210 50:$3.6400 25:$3.7750 10:$3.7820 1:$4.3540
HGTG20N60A4D DISTI # HGTG20N60A4DFS-ND	ON Semiconductor	IGBT 600V 70A 290W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	337In Stock	1350:$2.9565 900:$3.4739 450:$3.8520 10:$4.9070 1:$5.4400
HGTG20N60A4D DISTI # 31882442	ON Semiconductor	PT P TO247 45A 600V SMPS	5215	4500:$1.8144 450:$1.9104
HGTG20N60A4D DISTI # 31600626	ON Semiconductor	PT P TO247 45A 600V SMPS	1362	500:$2.4080 250:$2.8710 100:$3.3210 50:$3.6400 25:$3.7750 10:$3.7820 4:$4.3540
HGTG20N60A4D DISTI # 31262149	ON Semiconductor	PT P TO247 45A 600V SMPS	450	500:$2.4080 250:$2.8710 100:$3.3210 50:$3.6400 25:$3.7750 10:$3.7820 3:$4.3540
HGTG20N60A4D DISTI # HGTG20N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 9000	450:$1.9900 900:$1.9900 1800:$1.9900 2700:$1.9900 4500:$1.8900
HGTG20N60A4D DISTI # HGTG20N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D) RoHS: Compliant Min Qty: 450	Asia - 0	450:$3.1792 900:$3.0569 1350:$2.9437 2250:$2.8386 4500:$2.7407 11250:$2.6493 22500:$2.6059
HGTG20N60A4D DISTI # HGTG20N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D) RoHS: Compliant Min Qty: 1	Europe - 0	1:€2.4900 10:€2.2900 25:€2.1900 50:€2.0900 100:€1.9900 500:€1.8900 1000:€1.7900
HGTG20N60A4D DISTI # 95B2568	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$5.1800 10:$4.4300 25:$4.2400 50:$4.0500 100:$3.8600 250:$3.6700
HGTG20N60A4D DISTI # 95B2568	ON Semiconductor	SINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	397	250:$3.5400 100:$3.7200 50:$3.9000 25:$4.0900 10:$4.2700 1:$4.9900
HGTG20N60A4D DISTI # 25M9637	ON Semiconductor	IGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes	2606	500:$3.0300 250:$3.3800 100:$3.5600 50:$3.7400 25:$3.9300 10:$4.1100 1:$4.8300
HGTG20N60A4D DISTI # 512-HGTG20N60A4D	ON Semiconductor	IGBT Transistors 600V RoHS: Compliant	779	1:$4.8300 10:$4.1100 100:$3.5600 250:$3.3800 500:$3.0300
HGTG20N60A4D DISTI # HGTG20N60A4D	ON Semiconductor	Transistor: IGBT,600V,40A,190W,TO247-3	459	1:$4.0900 5:$3.7900 30:$2.9700 120:$2.5900
HGTG20N60A4D DISTI # HGTG20N60A4D	ON Semiconductor	Transistor: IGBT,600V,40A,190W,TO247-3	455	1:$4.0800 5:$3.7900 30:$2.9700 120:$2.5900
HGTG20N60A4D	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 8
HGTG20N60A4D DISTI # 1057679	ON Semiconductor	IGBT, TO-247 RoHS: Compliant	2645	500:$4.9700 250:$5.5400 100:$5.8400 10:$6.7500 1:$7.9300
HGTG20N60A4D DISTI # 1057679	ON Semiconductor	IGBT, TO-247 RoHS: Compliant	2631	500:£2.3700 250:£2.6300 100:£2.7700 10:£3.2000 1:£4.1900
HGTG20N60A4D DISTI # XSFP00000149449	Fairchild Semiconductor Corporation	RoHS: Compliant	390 in Stock0 on Order	390:$4.4500 60:$4.9000

Image	Part #	Description
	Mfr.#: HGTG20N60A4D OMO.#: OMO-HGTG20N60A4D	IGBT Transistors 600V
	Mfr.#: HGTG20N60B3D OMO.#: OMO-HGTG20N60B3D-ON-SEMICONDUCTOR	IGBT 600V 40A 165W TO247
	Mfr.#: HGTG20N100D2 OMO.#: OMO-HGTG20N100D2-1190	Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG20N120E2 OMO.#: OMO-HGTG20N120E2-1190	Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG20N50C1D OMO.#: OMO-HGTG20N50C1D-1190	Insulated Gate Bipolar Transistor, 26A I(C), 500V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG20N60 OMO.#: OMO-HGTG20N60-1190	New and Original
	Mfr.#: HGTG20N60B3DJ5 OMO.#: OMO-HGTG20N60B3DJ5-1190	New and Original
	Mfr.#: HGTG20N60C3D OMO.#: OMO-HGTG20N60C3D-ON-SEMICONDUCTOR	IGBT 600V 45A 164W TO247
	Mfr.#: HGTG20N60C3DR OMO.#: OMO-HGTG20N60C3DR-1190	New and Original
	Mfr.#: HGTG20N60A4 20N60A4 OMO.#: OMO-HGTG20N60A4-20N60A4-1190	New and Original

HGTG20N60A4D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes