HGTG20N60A4D

HGTG20N60A4D vs HGTG20N60A4D,20N60A4 vs HGTG20N60A4D,20N60A4D,20

 
PartNumberHGTG20N60A4DHGTG20N60A4D,20N60A4HGTG20N60A4D,20N60A4D,20
DescriptionIGBT Transistors 600V
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSE--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C70 A--
Pd Power Dissipation290 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTG20N60A4D--
PackagingTube--
Continuous Collector Current Ic Max70 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current70 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesHGTG20N60A4D_NL--
Unit Weight0.225401 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTG20N60A4D IGBT Transistors 600V
ON Semiconductor
ON Semiconductor
HGTG20N60A4D IGBT 600V 70A 290W TO247
HGTG20N60A4D,20N60A4 New and Original
HGTG20N60A4D,20N60A4D,20 New and Original
HGTG20N60A4D,HGTG20N60A4 New and Original
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