C2M0160120D

Mfr. #:: C2M0160120D
Manufacturer:: N/A
Description:: MOSFET N-CH 1200V 19A TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: C2M0160120D Datasheet
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More Information:: C2M0160120D more Information

Product Attribute
Attribute Value

Manufacturer: CREE

Product Category: FETs - Single

Series: Z-FET

Packaging: Tube

Unit-Weight: 1.340411 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Technology: SiC

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Through Hole

Number-of-Channels: 1 Channel

Supplier-Device-Package: TO-247-3

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 125W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 1200V (1.2kV)

Input-Capacitance-Ciss-Vds: 527pF @ 800V

FET-Feature: Silicon Carbide (SiC)

Current-Continuous-Drain-Id-25°C: 17.7A (Tc)

Rds-On-Max-Id-Vgs: 196 mOhm @ 10A, 20V

Vgs-th-Max-Id: 2.5V @ 500μA

Gate-Charge-Qg-Vgs: 32.6nC @ 20V

Pd-Power-Dissipation: 125 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 7 ns

Rise-Time: 12 ns

Vgs-Gate-Source-Voltage: - 10 V + 25 V

Id-Continuous-Drain-Current: 17.7 A

Vds-Drain-Source-Breakdown-Voltage: 1200 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 160 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 13 ns

Typical-Turn-On-Delay-Time: 7 ns

Qg-Gate-Charge: 32.6 nC

Forward-Transconductance-Min: 4.1 S

Channel-Mode: Enhancement

Tags: C2M0, C2M

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

C2M0160120D Description

***ical: Trans MOSFET N-CH SiC 1.2KV 19A 3-Pin(3+Tab) TO-247

***p One Stop Global: Trans MOSFET N-CH 12V 17.7A 3-Pin(3+Tab) TO-247

***ark: SIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3

***ment14 APAC: SIC MOSFET, N-CH, 1.2KV, 17.7A, TO-247-3

***Components: N-CHANNEL SIC MOSFET 1.2KV 19A TO247

***i-Key: MOSFET N-CH 1200V 17.7A TO-247

***hardson RFPD: SILICON CARBIDE POWER TRANSISTORS/MODULES

C2M0160120D More Information

Wolfspeed C2M™ SiC Power MOSFETs: Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more

Market price

Part #	Mfg.	Description	Stock	Price
C2M0160120D DISTI # V99:2348_06265416	Cree, Inc.	Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247 RoHS: Compliant	600	1:$8.2769
C2M0160120D DISTI # C2M0160120D-ND	Wolfspeed	MOSFET N-CH 1200V 19A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	5462In Stock	1:$8.7500
C2M0160120D DISTI # 31274971	Cree, Inc.	Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247 RoHS: Compliant	600	1:$8.2769
C2M0160120D DISTI # 98Y6012	Wolfspeed	MOSFET, N-CH, 1.2KV, 19A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V,Power , RoHS Compliant: Yes	840	1:$9.2300
C2M0160120D DISTI # 08X3830	Wolfspeed	SIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17.7A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	600	1:$9.2300
C2M0160120D DISTI # 941-C2M0160120D	Cree, Inc.	MOSFET SIC MOSFET 1200V RDS ON 160 mOhm RoHS: Compliant	1884	1:$8.3300
C2M0160120D DISTI # 9047348	Cree, Inc.	N-CHANNEL SIC MOSFET 1.2KV 19A TO247, EA	65	1:£6.5300 5:£6.3300 10:£6.2000 30:£6.0800 60:£5.9600
C2M0160120D DISTI # 9047348P	Cree, Inc.	N-CHANNEL SIC MOSFET 1.2KV 19A TO247, TU	636	5:£6.3300 10:£6.2000 30:£6.0800 60:£5.9600
C2M0160120D DISTI # C2M0160120D	Wolfspeed	Transistor: N-MOSFET,SiC,unipolar,1.2kV,17.7A,125W,TO247-3	6	1:$15.8700 3:$13.4200 10:$10.6000 30:$9.8700
C2M0160120D DISTI # C2M0160120D	Wolfspeed	SILICON CARBIDE POWER TRANSISTORS/MODULES RoHS: Compliant	115107	1:$7.4900 50:$7.2500
C2M0160120D DISTI # 2630830	Wolfspeed	MOSFET, N-CH, 1.2KV, 19A, TO-247 RoHS: Compliant	866	1:£7.1200 5:£6.5500 10:£6.4200 50:£6.3600 100:£6.3500
C2M0160120D DISTI # 2630830	Wolfspeed	MOSFET, N-CH, 1.2KV, 19A, TO-247 RoHS: Compliant	840	1:$13.5300

C2M0160120D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes