E3M0065090D

E3M0065090D
Mfr. #:
E3M0065090D
Manufacturer:
N/A
Description:
MOSFET 900V 65mOhms G3 SiC MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
E3M0065090D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
E3M0065090D more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
900 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
84.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.7 V
Vgs - Gate-Source Voltage:
18 V, - 8 V
Qg - Gate Charge:
30.4 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
1 N-Channel
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
13.6 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
600
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
35 ns
Tags
E3M0, E3M
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
E-Series AEC-Q101 Silicon Carbide MOSFETs & Diodes
Wolfspeed / Cree E-Series AEC-Q101 Silicon Carbide MOSFETs and Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets. Wolfspeed's E-Series is also PPAP capable and delivers the highest available power density and durability. The E series is ideal for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications.
Part # Mfg. Description Stock Price
E3M0065090D
DISTI # V99:2348_22338928
Cree, Inc.900V, 65 mOhm, G3 SiC MOSFET505
  • 25:$10.2670
  • 10:$10.3379
  • 1:$11.4870
E3M0065090D
DISTI # V36:1790_22338928
Cree, Inc.900V, 65 mOhm, G3 SiC MOSFET0
    E3M0065090D
    DISTI # E3M0065090D-ND
    WolfspeedE-SERIES 900V, 65 MOHM, G3 SIC M
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    590In Stock
    • 1:$12.0800
    E3M0065090D
    DISTI # 30153690
    Cree, Inc.900V, 65 mOhm, G3 SiC MOSFET505
    • 25:$10.2670
    • 10:$10.3379
    • 1:$11.4870
    E3M0065090D
    DISTI # 71AC0354
    WolfspeedMOSFET, N-CH, 900V, 35A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes560
    • 1:$12.5500
    E3M0065090D
    DISTI # 941-E3M0065090D
    Cree, Inc.MOSFET 900V 65mOhms G3 SiC MOSFET
    RoHS: Compliant
    818
    • 1:$11.5100
    E3M0065090D
    DISTI # 2916496
    WolfspeedMOSFET, N-CH, 900V, 35A, 150DEG C, 125W
    RoHS: Compliant
    575
    • 100:£8.8100
    • 50:£8.8500
    • 10:£8.8800
    • 5:£8.9200
    • 1:£8.9500
    E3M0065090D
    DISTI # 2916496
    WolfspeedMOSFET, N-CH, 900V, 35A, 150DEG C, 125W
    RoHS: Compliant
    560
    • 1:$24.0500
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    Availability
    Stock:
    776
    On Order:
    2759
    Enter Quantity:
    Current price of E3M0065090D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $11.51
    $11.51
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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