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E3M0120090D

E3M0120090D
Mfr. #:
E3M0120090D
Manufacturer:
N/A
Description:
MOSFET 900V 120mOhms G3 SiC MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
E3M0120090D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
E3M0120090D more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
900 V
Id - Continuous Drain Current:
23 A
Rds On - Drain-Source Resistance:
155 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.7 V
Vgs - Gate-Source Voltage:
18 V, - 8 V
Qg - Gate Charge:
17.3 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
97 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
1 N-Channel
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
7.7 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
600
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
27 ns
Tags
E3M0, E3M
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
E-Series AEC-Q101 Silicon Carbide MOSFETs & Diodes
Wolfspeed / Cree E-Series AEC-Q101 Silicon Carbide MOSFETs and Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets. Wolfspeed's E-Series is also PPAP capable and delivers the highest available power density and durability. The E series is ideal for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications.
Part # Mfg. Description Stock Price
E3M0120090D
DISTI # V99:2348_22338927		Cree, Inc.E-Series 900V, 120 mOhm, G3 SiC MOSFET600
  • 10:$6.5490
  • 1:$7.9486
E3M0120090D
DISTI # E3M0120090D-ND		WolfspeedE-SERIES 900V, 120 MOHM, G3 SIC
RoHS: Compliant
Min Qty: 1
Container: Tube		593In Stock
  • 1:$7.6000
E3M0120090D
DISTI # 32023231		Cree, Inc.E-Series 900V, 120 mOhm, G3 SiC MOSFET600
  • 10:$7.0402
  • 1:$8.5447
E3M0120090D
DISTI # 71AC0355		WolfspeedMOSFET, N-CH, 900V, 23A, 150DEG C, 97W,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes573
  • 1:$7.9000
E3M0120090D
DISTI # 941-E3M0120090D		Cree, Inc.MOSFET 900V 120mOhms G3 SiC MOSFET
RoHS: Compliant		560
  • 1:$7.2400
E3M0120090D
DISTI # 2916497		WolfspeedMOSFET, N-CH, 900V, 23A, 150DEG C, 97W
RoHS: Compliant		577
  • 100:£5.5400
  • 50:£5.6100
  • 10:£5.6800
  • 5:£5.7400
  • 1:£5.8100
E3M0120090D
DISTI # 2916497		WolfspeedMOSFET, N-CH, 900V, 23A, 150DEG C, 97W
RoHS: Compliant		573
  • 1:$16.3400
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Availability
Stock:
540
On Order:
2523
Enter Quantity:
Current price of E3M0120090D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$7.24
$7.24
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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