SIR812DP-T1-GE3

SIR812DP-T1-GE3
Mfr. #:
SIR812DP-T1-GE3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 30V 60A 104W 1.45mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SIR812DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIR812DP-T1-GE3 more Information
Product Attribute
Attribute Value
Tags
SIR81, SIR8, SIR
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
*** Devices
TRANS, SBU, TED, DPN, SIR812DP
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET
Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165 Ohms and 60 A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.Learn More
Part # Mfg. Description Stock Price
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.7238
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 48.9A 8-Pin PowerPAK SO T/R (Alt: SIR812DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR812DP-T1-GE3
    DISTI # 99W9564
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$0.6960
    • 3000:$0.6910
    • 6000:$0.6580
    • 12000:$0.5830
    SIR812DP-T1-GE3
    DISTI # 04X9744
    Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$1.3600
    • 10:$1.3200
    • 100:$1.0400
    • 250:$0.9870
    • 500:$0.9220
    • 1000:$0.7380
    SIR812DP-T1-GE3
    DISTI # 78-SIR812DP-T1-GE3
    Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant
    436
    • 1:$1.6500
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.8940
    • 1000:$0.7850
    • 3000:$0.7840
    SIR812DP-T1-GE3
    DISTI # 2283689
    Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
    RoHS: Compliant
    4
    • 5:£1.1300
    • 25:£1.0300
    • 100:£0.7870
    • 250:£0.7320
    • 500:£0.6760
    SIR812DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant
    Americas -
      SIR812DP-T1-GE3
      DISTI # 2283689
      Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
      RoHS: Compliant
      4
      • 1:$2.6200
      • 10:$2.1600
      • 100:$1.6500
      • 500:$1.4200
      • 1000:$1.2400
      • 3000:$1.2400
      Image Part # Description
      SIR812DP-T1-GE3

      Mfr.#: SIR812DP-T1-GE3

      OMO.#: OMO-SIR812DP-T1-GE3

      MOSFET 30V 60A 104W 1.45mohm @ 10V
      SIR812DP-T1-GE3

      Mfr.#: SIR812DP-T1-GE3

      OMO.#: OMO-SIR812DP-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 60A 104W 1.45mohm @ 10V
      Availability
      Stock:
      Available
      On Order:
      3000
      Enter Quantity:
      Current price of SIR812DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.14
      $1.14
      10
      $1.08
      $10.78
      100
      $1.02
      $102.15
      500
      $0.96
      $482.40
      1000
      $0.91
      $908.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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