SI4431BDY-T1-GE3

Mfr. #:: SI4431BDY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET P-CH 30V 5.7A 8SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4431BDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI4431BDY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Packaging: Reel

Part-Aliases: SI4431BDY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: SOIC-Narrow-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 P-Channel

Pd-Power-Dissipation: 1.5 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 10 ns

Rise-Time: 10 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 5.7 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistance: 30 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 70 ns

Typical-Turn-On-Delay-Time: 10 ns

Channel-Mode: Enhancement

Tags: SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431BDY-T1-GE3 Description

***roFlash: Trans Mosfet P-ch 30V 5.7A 8-PIN SOIC N T/r

*** Source Electronics: MOSFET P-CH 30V 5.7A 8SOIC

***: P-CHANNEL 30-V (D-S) MOSFET

***ure Electronics: 30V 0.03 Ohm P-ch SOIC-8

***i-Key: MOSFET P-CH 30V 5.7A 8SO

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.5W

SI4431BDY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4431BDY-T1-GE3 DISTI # SI4431BDY-T1-GE3-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4928
SI4431BDY-T1-GE3 DISTI # SI4431BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4249 5000:$0.4119 10000:$0.3949 15000:$0.3839 25000:$0.3739
SI4431BDY-T1-GE3 DISTI # 15R5014	Vishay Intertechnologies	P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes	0	1:$0.4390 2500:$0.4360 5000:$0.4230 10000:$0.4070
SI4431BDY-T1-GE3 DISTI # 84R8048	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes	0	1:$0.9200 10:$0.7580 25:$0.6990 50:$0.6410 100:$0.5820 250:$0.5410 500:$0.5000
SI4431BDY-T1-GE3 DISTI # 781-SI4431BDY-GE3	Vishay Intertechnologies	MOSFET 30V 7.5A 2.5W 30mohm @ 10V RoHS: Compliant	1970	1:$0.9200 10:$0.7580 100:$0.5820 500:$0.5000 1000:$0.3950 2500:$0.3690
SI4431BDY-T1-GE3 DISTI # 1868999	Vishay Intertechnologies	P CH MOSFET RoHS: Compliant	0	2500:$1.8400
SI4431BDY-T1-GE3 DISTI # 1868999	Vishay Intertechnologies	P CH MOSFET RoHS: Compliant	0	2500:£0.8190

Related products

Image	Part #	Description
	Mfr.#: SI4431BDY-T1-E3 OMO.#: OMO-SI4431BDY-T1-E3	MOSFET 30V (D-S) 7.5A
	Mfr.#: SI4431BDY-T1-GE3 OMO.#: OMO-SI4431BDY-T1-GE3	MOSFET 30V 7.5A 2.5W 30mohm @ 10V
	Mfr.#: SI4431BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4431BDY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4431BDY OMO.#: OMO-SI4431BDY-1190	MOSFET Transistor, P-Channel, SO
	Mfr.#: SI4431BDY-T1-E3 OMO.#: OMO-SI4431BDY-T1-E3-VISHAY	MOSFET P-CH 30V 5.7A 8-SOIC
	Mfr.#: SI4431BDY-T1-E3 GE3 OMO.#: OMO-SI4431BDY-T1-E3-GE3-1190	New and Original
	Mfr.#: SI4431BDY-T1-E3-S OMO.#: OMO-SI4431BDY-T1-E3-S-1190	New and Original
	Mfr.#: SI4431BDY-T1-E3CT OMO.#: OMO-SI4431BDY-T1-E3CT-1190	New and Original
	Mfr.#: SI4431BDY-T1-GE3 OMO.#: OMO-SI4431BDY-T1-GE3-VISHAY	MOSFET P-CH 30V 5.7A 8SOIC
	Mfr.#: SI4431BDYT1E3 OMO.#: OMO-SI4431BDYT1E3-1190	New and Original

Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of SI4431BDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.55~~; ~~$0.55~~

10: ~~$0.53~~; ~~$5.26~~

100: ~~$0.50~~; ~~$49.82~~

500: ~~$0.47~~; ~~$235.25~~

1000: ~~$0.44~~; ~~$442.80~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI4431BDY-T 6
SI4431BD 8
SI4431B 10
SI4431 34
SI443 128
SI44 574
SI4 2994

SI4431BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes