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IPB60R600CP

IPB60R600CP
Mfr. #:
IPB60R600CP
Manufacturer:
Rochester Electronics, LLC
Description:
IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
Lifecycle:
New from this manufacturer.
Datasheet:
IPB60R600CP Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INFINEON
Product Category
FETs - Single
Series
CoolMOS CP
Packaging
Reel
Part-Aliases
IPB60R600CPATMA1 SP000405892
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Tradename
CoolMOS
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
60 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
17 ns
Rise-Time
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
6.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Rds-On-Drain-Source-Resistance
600 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
75 ns
Typical-Turn-On-Delay-Time
17 ns
Qg-Gate-Charge
21 nC
Channel-Mode
Enhancement
Tags
IPB60R600C, IPB60R6, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 6.1A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 600V 6.1A TO263
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.1A; Package / Case:TO-263; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.1A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET
Part # Mfg. Description Stock Price
IPB60R600CPATMA1
DISTI # IPB60R600CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R600CPATMA1
    DISTI # IPB60R600CPATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R600CPATMA1
      DISTI # IPB60R600CPATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		6970
        • 1000:$0.7100
        • 500:$0.7400
        • 100:$0.7700
        • 25:$0.8100
        • 1:$0.8700
        IPB60R600CP
        DISTI # 726-IPB60R600CP        		Infineon Technologies AGMOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
        RoHS: Compliant        		874
        • 1:$2.0800
        • 10:$1.6100
        • 100:$1.4600
        • 250:$1.3100
        • 500:$1.1300
        • 1000:$0.9540
        • 2000:$0.7930
        • 5000:$0.7750
        • 10000:$0.7460
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        Mfr.#: IPB600N25N3 G

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        Mfr.#: IPB60R380C6 .

        OMO.#: OMO-IPB60R380C6--1190

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        Availability
        Stock:
        Available
        On Order:
        3500
        Enter Quantity:
        Current price of IPB60R600CP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.06
        $1.06
        10
        $1.01
        $10.12
        100
        $0.96
        $95.85
        500
        $0.91
        $452.65
        1000
        $0.85
        $852.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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