DMN3012LDG-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerDI3333-B

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

12 mOhms, 6 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V, 750 mV

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

6.1 nC, 12.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.2 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

27 S, 46 S

Fall Time:

2.3 ns, 2.9 ns

Product Type:

MOSFET

Rise Time:

2.7 ns, 3.5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

6.4 ns, 12.4 ns

Typical Turn-On Delay Time:

5.1 ns, 4.4 ns

Unit Weight:

0.001552 oz

Tags

DMN3012, DMN301, DMN30, DMN3, DMN