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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| FF200R12KT3HOSA1 DISTI # FF200R12KT3HOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk | Temporarily Out of Stock |
|
| FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk | Temporarily Out of Stock |
|
| FF200R12KT3 DISTI # FF200R12KT3 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: FF200R12KT3) RoHS: Compliant Min Qty: 10 | Asia - 50 |
|
| FF200R12KT3 DISTI # SP000100789 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: SP000100789) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FF200R12KT3_E DISTI # SP000314729 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: SP000314729) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FF200R12KT3HOSA1 DISTI # FF200R12KT3HOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Trays (Alt: FF200R12KT3HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Bulk (Alt: FF200R12KT3EHOSA1) Min Qty: 4 Container: Bulk | Americas - 0 |
|
| FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Trays (Alt: FF200R12KT3EHOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FF200R12KT3HOSA1 DISTI # 13AC8640 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A,Transistor Polarity:N Channel,DC Collector Current:295A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:1.05kW,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes | 10 |
|
| FF200R12KT3 DISTI # 641-FF200R12KT3 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 295A | 13 |
|
| FF200R12KT3_E DISTI # 641-FF200R12KT3_E | Infineon Technologies AG | IGBT Modules IGBT 1200V 200A | 4 |
|
| FF200R12KT3EHOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 4 |
|
| FF200R12KT3EHOSA1 DISTI # 8386894 | Infineon Technologies AG | IGBT MODULE N-CH 1.2KV 295A AG-62MM-1, EA | 9 |
|
| FF200R12KT3HOSA1 DISTI # 2726124 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A RoHS: Compliant | 10 |
|
| FF200R12KT3HOSA1 DISTI # 2726124 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A | 8 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: F200R12KT3 OMO.#: OMO-F200R12KT3-1190 |
New and Original |