MRF085HR3

Mfr. #:: MRF085HR3
Manufacturer:: NXP Semiconductors
Description:: RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V.
Lifecycle:: New from this manufacturer.
Datasheet:: MRF085HR3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MRF085HR3 Datasheet MRF085HR3 Datasheet (P4-P6)MRF085HR3 Datasheet (P7-P9)MRF085HR3 Datasheet (P10-P11)
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More Information:: MRF085HR3 more Information MRF085HR3 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: Dual N-Channel

Technology:: Si

Id - Continuous Drain Current:: 210 mA

Vds - Drain-Source Breakdown Voltage:: - 500 mV, 133 V

Gain:: 25.6 dB

Output Power:: 85 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-650H-4

Packaging:: Reel

Operating Frequency:: 1.8 MHz to 1215 MHz

Series:: MRF085H

Type:: RF Power MOSFET

Brand:: NXP Semiconductors

Number of Channels:: 2 Channel

Pd - Power Dissipation:: 235 W

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 250

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Part # Aliases:: 935351494128

Unit Weight:: 0 oz

Tags: MRF0, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF085HR3 Description

***ark: Wideband Rf Power Ldmos Transistor, 85 W Cw Over 1.8-1215 Mhz, 50 V. Reel

***W: RF Power Transistor, 0.0018 to 1.215 GHz, 85 W, Typ. Gain in dB is 25.6 @ 520 MHz, 50 V, SOT1911-1, LDMOS

***et Europe: N-channel Wideband RF Power LDMOS Transistor High Ruggedness Enhancement-Mode 1.8 to 1215 MHz 85W 50V NI-650H-4L T/R

***i-Key: WIDEBAND RF POWER LDMOS TRANSIST

***hardson RFPD: RF POWER TRANSISTOR

Market price

Part #	Mfg.	Description	Stock	Price
MRF085HR3 DISTI # MRF085HR3-ND	NXP Semiconductors	WIDEBAND RF POWER LDMOS TRANSIST RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$121.5753
MRF085HR3 DISTI # MRF085HR3	Avnet, Inc.	N-channel Wideband RF Power LDMOS Transistor High Ruggedness Enhancement-Mode 1.8 to 1215 MHz 85W 50V NI-650H-4L T/R - Tape and Reel (Alt: MRF085HR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	2500:$116.1900 1500:$118.4900 1000:$122.9900 500:$127.9900 250:$133.1900
MRF085HR3 DISTI # MRF085HR3	Avnet, Inc.	N-channel Wideband RF Power LDMOS Transistor High Ruggedness Enhancement-Mode 1.8 to 1215 MHz 85W 50V NI-650H-4L T/R (Alt: MRF085HR3) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 0	2500:€109.7900 1500:€112.5900 1000:€116.3900 500:€120.0900 250:€122.2900
MRF085HR3 DISTI # 33AC4413	NXP Semiconductors	WIDEBAND RF POWER LDMOS TRANSISTOR, 85 W CW OVER 1.8-1215 MHZ, 50 V. REEL	0	100:$114.2700 50:$121.5800 25:$123.4100 10:$125.2400 5:$128.8900 1:$132.5500
MRF085HR3 DISTI # 771-MRF085HR3	NXP Semiconductors	RF MOSFET Transistors MRF085H/CFM4F///REEL 13 Q2 NDP RoHS: Compliant	0	250:$113.0900
MRF085HR3 DISTI # MRF085HR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$137.1200

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MRF085HR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes