PartNumber | MRF09030LR1 | MRF085HR5 | MRF085HR3 |
Description | RF Bipolar Transistors RF Transistor | RF MOSFET Transistors High Ruggedness N--Channel | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V. |
Manufacturer | Advanced Semiconductor, Inc. | NXP | NXP |
Product Category | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | Bipolar Power | - | - |
Technology | Si | Si | Si |
Packaging | Tray | Reel | Reel |
Type | RF Bipolar Power | RF Power MOSFET | RF Power MOSFET |
Brand | Advanced Semiconductor, Inc. | NXP Semiconductors | NXP Semiconductors |
Product Type | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Subcategory | Transistors | MOSFETs | MOSFETs |
Transistor Polarity | - | Dual N-Channel | Dual N-Channel |
Id Continuous Drain Current | - | 210 mA | 210 mA |
Vds Drain Source Breakdown Voltage | - | - 500 mV, 133 V | - 500 mV, 133 V |
Gain | - | 25.6 dB | 25.6 dB |
Output Power | - | 85 W | 85 W |
Minimum Operating Temperature | - | - 40 C | - 40 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | NI-650H-4 | NI-650H-4 |
Operating Frequency | - | 1.8 MHz to 1215 MHz | 1.8 MHz to 1215 MHz |
Series | - | MRF085H | MRF085H |
Number of Channels | - | 2 Channel | 2 Channel |
Pd Power Dissipation | - | 235 W | 235 W |
Factory Pack Quantity | - | 50 | 250 |
Vgs Gate Source Voltage | - | - 6 V, 10 V | - 6 V, 10 V |
Vgs th Gate Source Threshold Voltage | - | 1.5 V | 1.5 V |
Part # Aliases | - | 935351494178 | 935351494128 |
Unit Weight | - | 0 oz | 0 oz |