NTTD1P02R2G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

Micro-8

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

1.45 A

Rds On - Drain-Source Resistance:

160 mOhms

Vgs - Gate-Source Voltage:

8 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.95 mm

Length:

3 mm

Product:

MOSFET Small Signal

Transistor Type:

2 P-Channel

Type:

MOSFET

Width:

3 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

2.5 S

Fall Time:

20 ns, 30 ns

Product Type:

MOSFET

Rise Time:

20 ns, 30 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

10 ns

Tags

NTTD1, NTTD, NTT