ZXMN2F34MATA

Mfr. #:: ZXMN2F34MATA
Manufacturer:: Diodes Incorporated
Description:: MOSFET 20V N-Channel Enhance. Mode MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: ZXMN2F34MATA Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DFN322-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 5.1 A

Rds On - Drain-Source Resistance:: 60 mOhms

Vgs - Gate-Source Voltage:: 12 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 6.6 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.95 mm

Length:: 2.1 mm

Transistor Type:: 1 N-Channel

Width:: 2.1 mm

Brand:: Diodes Incorporated

Fall Time:: 5.1 ns

Product Type:: MOSFET

Rise Time:: 4.2 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 9.9 ns

Typical Turn-On Delay Time:: 2.65 ns

Unit Weight:: 0.000317 oz

Tags: ZXMN2F34, ZXMN2F, ZXMN2, ZXMN, ZXM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN2F34MATA Description

***C: Trans MOSFET N-CH 20V 5.1A 3-Pin DFN T/R Trans MOSFET N-CH 20V 5.1A 3-Pin DFN T/R

***el Electronic: MOSFET 20V N-Channel Enhance. Mode MOSFET

***ment14 APAC: MOSFET, N, DFN322; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DFN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.1A; On State Resistance @ Vgs = 2.5V:120mohm; On State Resistance @ Vgs = 4.5V:60mohm; Package / Case:DFN322; Power Dissipation Pd:1.35W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:500mV

Market price

Part #	Mfg.	Description	Stock	Price
ZXMN2F34MATA DISTI # ZXMN2F34MATR-ND	Diodes Incorporated	MOSFET N-CH 20V 4A DFN-2X2 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
ZXMN2F34MATA DISTI # ZXMN2F34MACT-ND	Diodes Incorporated	MOSFET N-CH 20V 4A DFN-2X2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
ZXMN2F34MATA DISTI # ZXMN2F34MADKR-ND	Diodes Incorporated	MOSFET N-CH 20V 4A DFN-2X2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
ZXMN2F34MATA DISTI # 522-ZXMN2F34MATA	Diodes Incorporated	MOSFET 20V N-Channel Enhance. Mode MOSFET RoHS: Compliant	0
ZXMN2F34MATA	Zetex / Diodes Inc		2798
ZXMN2F34MATA DISTI # 1583666	Diodes Incorporated	MOSFET, N, DFN322 RoHS: Compliant	0	25:$0.7080 5:$1.1200

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Availability

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On Order:: 4500
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ZXMN2F34MATA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes