C2M0025120D

C2M0025120D
Mfr. #:
C2M0025120D
Manufacturer:
N/A
Description:
MOSFET N-CH 1200V 90A TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
C2M0025120D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
C2M0025120D more Information
Product Attribute
Attribute Value
Manufacturer
Cree
Product Category
FETs - Single
Series
Z-FET
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Package-Case
TO-247-3
Technology
SiC
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Through Hole
Number-of-Channels
1 Channel
Supplier-Device-Package
TO-247-3
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
463W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
1200V (1.2kV)
Input-Capacitance-Ciss-Vds
2788pF @ 1000V
FET-Feature
Silicon Carbide (SiC)
Current-Continuous-Drain-Id-25°C
90A (Tc)
Rds-On-Max-Id-Vgs
34 mOhm @ 50A, 20V
Vgs-th-Max-Id
2.4V @ 10mA
Gate-Charge-Qg-Vgs
161nC @ 20V
Pd-Power-Dissipation
463 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
28.4 ns
Rise-Time
31.6 ns
Vgs-Gate-Source-Voltage
- 10 V + 25 V
Id-Continuous-Drain-Current
90 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Vgs-th-Gate-Source-Threshold-Voltage
2.4 V
Rds-On-Drain-Source-Resistance
25 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
28.8 ns
Typical-Turn-On-Delay-Time
14.4 ns
Qg-Gate-Charge
406 nC
Forward-Transconductance-Min
23.6 S
Channel-Mode
Enhancement
Tags
C2M00, C2M0, C2M
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
***ark
MOSFET TRANSISTOR, N CHANNEL, 90 A, 1.2 KV, 0.025 OHM, 20 V, 2.4 V ROHS COMPLIANT: YES
***ical
Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
***ment14 APAC
场效应管, MOSFET, N沟道, 1.2KV, 90A, TO-247;
***i-Key
MOSFET N-CH 1200V 90A TO-247
***hardson RFPD
SILICON CARBIDE MOSFETS
***nell
MOSFET, CANALE N, 1.2KV, 90A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:90A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.025ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:463W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Part # Mfg. Description Stock Price
C2M0025120D
DISTI # 29423888
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
RoHS: Compliant
4162
  • 2:$92.7000
C2M0025120D
DISTI # C2M0025120D-ND
WolfspeedMOSFET N-CH 1200V 90A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
558In Stock
  • 1:$73.2900
C2M0025120D
DISTI # 54X4873
WolfspeedMOSFET Transistor, N Channel, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V RoHS Compliant: Yes15
  • 1:$69.8000
C2M0025120D
DISTI # 941-C2M0025120D
Cree, Inc.MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
RoHS: Compliant
2
  • 1:$69.8000
  • 100:$67.1200
C2M0025120D
DISTI # 9158818
Cree, Inc.N-CHAN SIC MOSFET 1200V 90A TO247, EA103
  • 1:£55.4400
  • 5:£53.2000
  • 10:£51.8800
C2M0025120D
DISTI # 9158818P
Cree, Inc.N-CHAN SIC MOSFET 1200V 90A TO247, TU135
  • 5:£53.2000
  • 10:£51.8800
C2M0025120DChip 1 Exchange 139
    C2M0025120D
    DISTI # 2422213
    WolfspeedMOSFET, N CHANNEL, 1.2KV, 90A, TO-247
    RoHS: Compliant
    300
    • 50:£53.9600
    • 10:£53.9700
    • 5:£54.8000
    • 1:£55.9200
    C2M0025120D
    DISTI # 2422213
    WolfspeedMOSFET, N CHANNEL, 1.2KV, 90A, TO-247
    RoHS: Compliant
    300
    • 1:$115.0600
    Image Part # Description
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    OMO.#: OMO-C2M0040120D

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    C2M0025120D

    Mfr.#: C2M0025120D

    OMO.#: OMO-C2M0025120D

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    OMO.#: OMO-C2M0025120-1190

    New and Original
    C2M0025120D

    Mfr.#: C2M0025120D

    OMO.#: OMO-C2M0025120D-WOLFSPEED

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    Mfr.#: C2M0040120

    OMO.#: OMO-C2M0040120-1190

    New and Original
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    New and Original
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    Mfr.#: C2M0080120D

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    C2M0080120DCREE

    Mfr.#: C2M0080120DCREE

    OMO.#: OMO-C2M0080120DCREE-1190

    New and Original
    C2M0080170P

    Mfr.#: C2M0080170P

    OMO.#: OMO-C2M0080170P-WOLFSPEED

    ZFET SIC DMOSFET, 1700V VDS, RDS
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of C2M0025120D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $100.68
    $100.68
    10
    $95.65
    $956.46
    100
    $90.61
    $9 061.20
    500
    $85.58
    $42 789.00
    1000
    $80.54
    $80 544.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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