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BSZ025N04LSATMA1

BSZ025N04LSATMA1
Mfr. #:
BSZ025N04LSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ025N04LSATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSZ025N04LSATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
2 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
52 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
55 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
27 ns
Typical Turn-On Delay Time:
6 ns
Part # Aliases:
BSZ025N04LS SP001252032
Unit Weight:
0.005503 oz
Tags
BSZ02, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 2.5 mOhm 52 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***p One Stop Global
Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
***i-Key
MOSFET N-CH 40V 22A TSDSON-8
***ical
Power-MOSFET, 40V
***ark
TRENCH <= 40V
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:69W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 40V, 40A, TSDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.002ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:69W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Part # Mfg. Description Stock Price
BSZ025N04LSATMA1
DISTI # V36:1790_06384227		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		210000
  • 5000:$0.5521
BSZ025N04LSATMA1
DISTI # V72:2272_06384227		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		4112
  • 3000:$0.5625
  • 1000:$0.5858
  • 500:$0.7872
  • 250:$0.8008
  • 100:$0.8898
  • 25:$1.0361
  • 10:$1.1513
  • 1:$1.4815
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 22A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1188In Stock
  • 1000:$0.7060
  • 500:$0.8942
  • 100:$1.0825
  • 10:$1.3880
  • 1:$1.5500
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 22A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1188In Stock
  • 1000:$0.7060
  • 500:$0.8942
  • 100:$1.0825
  • 10:$1.3880
  • 1:$1.5500
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 22A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.5849
  • 5000:$0.6077
BSZ025N04LSATMA1
DISTI # 31741599		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		210000
  • 5000:$0.5521
BSZ025N04LSATMA1
DISTI # 31053930		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 50000:$0.5216
  • 30000:$0.5315
  • 20000:$0.5503
  • 10000:$0.5701
  • 5000:$0.5919
BSZ025N04LSATMA1
DISTI # 33152146		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.7280
BSZ025N04LSATMA1
DISTI # 32881809		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
RoHS: Compliant		4112
  • 3000:$0.5521
  • 1000:$0.5858
  • 500:$0.7872
  • 250:$0.8008
  • 100:$0.8898
  • 25:$1.0361
  • 11:$1.1513
BSZ025N04LSATMA1
DISTI # BSZ025N04LSATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON FL T/R - Tape and Reel (Alt: BSZ025N04LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.5269
  • 30000:$0.5369
  • 20000:$0.5559
  • 10000:$0.5759
  • 5000:$0.5979
BSZ025N04LSATMA1
DISTI # SP001252032		Infineon Technologies AGTrans MOSFET N-CH 40V 22A 8-Pin TSDSON FL T/R (Alt: SP001252032)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.5039
  • 30000:€0.5429
  • 20000:€0.5879
  • 10000:€0.6409
  • 5000:€0.7839
BSZ025N04LSATMA1
DISTI # 12AC9454		Infineon Technologies AGMOSFET, N-CH, 40V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes2935
  • 1000:$0.6300
  • 500:$0.7980
  • 250:$0.8500
  • 100:$0.9030
  • 50:$0.9920
  • 25:$1.0800
  • 10:$1.1700
  • 1:$1.3700
BSZ025N04LS
DISTI # 726-BSZ025N04LS		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		3006
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8940
  • 500:$0.7900
  • 1000:$0.6240
  • 5000:$0.5530
  • 10000:$0.5320
BSZ025N04LSATMA1
DISTI # 726-BSZ025N04LSATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		4338
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8940
  • 500:$0.7900
  • 1000:$0.6240
  • 5000:$0.5530
  • 10000:$0.5320
BSZ025N04LSATMA1Infineon Technologies AGSingle N-Channel 40 V 2.5 mOhm 52 nC OptiMOS Power Mosfet - TSDSON-8 FL
RoHS: Not Compliant		5000Reel
  • 5000:$0.5200
BSZ025N04LSATMA1
DISTI # 2709857		Infineon Technologies AGMOSFET, N-CH, 40V, 40A, TSDSON
RoHS: Compliant		2935
  • 1000:$1.0800
  • 500:$1.3600
  • 100:$1.7600
  • 10:$2.2200
  • 1:$2.5000
BSZ025N04LSATMA1
DISTI # 2709857		Infineon Technologies AGMOSFET, N-CH, 40V, 40A, TSDSON8818
  • 500:£0.5970
  • 250:£0.6360
  • 100:£0.6750
  • 25:£0.7740
  • 5:£0.8730
BSZ025N04LSATMA1
DISTI # XSFP00000153419		Infineon Technologies AG 
RoHS: Compliant		10000 in Stock0 on Order
  • 10000:$0.5778
  • 5000:$0.6118
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSZ025N04LSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.36
$1.36
10
$1.16
$11.60
100
$0.89
$89.40
500
$0.79
$395.00
1000
$0.62
$624.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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