| PartNumber | BSZ021N04LS6ATMA1 | BSZ024N04LS6ATMA1 | BSZ023N04LSATMA1 |
| Description | MOSFET 40V Mosfet 2,1mOhm, S3O8MOSFET, Power MOSFET | MOSFET 40V Mosfet 2,4mOhm, S3O8MOSFET, Power MOSFET | MOSFET N-Ch 40V 40A TSDSON-8 FL |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Rds On Drain Source Resistance | 2.1 mOhms | 2.4 mOhms | 2.4 mOhms |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Series | BSZ0xx | BSZ0xx | BSZ023N04 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | - | - | Si |
| Id Continuous Drain Current | - | - | 40 A |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Qg Gate Charge | - | - | 37 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 69 W |
| Height | - | - | 1.1 mm |
| Length | - | - | 3.3 mm |
| Width | - | - | 3.3 mm |
| Forward Transconductance Min | - | - | 55 S |
| Fall Time | - | - | 8 ns |
| Rise Time | - | - | 38 ns |
| Typical Turn Off Delay Time | - | - | 42 ns |
| Typical Turn On Delay Time | - | - | 13 ns |
| Part # Aliases | - | - | SP000953208 |