PartNumber | BSZ021N04LS6ATMA1 | BSZ024N04LS6ATMA1 | BSZ023N04LSATMA1 |
Description | MOSFET 40V Mosfet 2,1mOhm, S3O8MOSFET, Power MOSFET | MOSFET 40V Mosfet 2,4mOhm, S3O8MOSFET, Power MOSFET | MOSFET N-Ch 40V 40A TSDSON-8 FL |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PQFN-8 | PQFN-8 | TSDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Rds On Drain Source Resistance | 2.1 mOhms | 2.4 mOhms | 2.4 mOhms |
Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Series | BSZ0xx | BSZ0xx | BSZ023N04 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Technology | - | - | Si |
Id Continuous Drain Current | - | - | 40 A |
Vgs th Gate Source Threshold Voltage | - | - | 2 V |
Qg Gate Charge | - | - | 37 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 69 W |
Height | - | - | 1.1 mm |
Length | - | - | 3.3 mm |
Width | - | - | 3.3 mm |
Forward Transconductance Min | - | - | 55 S |
Fall Time | - | - | 8 ns |
Rise Time | - | - | 38 ns |
Typical Turn Off Delay Time | - | - | 42 ns |
Typical Turn On Delay Time | - | - | 13 ns |
Part # Aliases | - | - | SP000953208 |