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SCT2750NYTB

SCT2750NYTB
Mfr. #:
SCT2750NYTB
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
Lifecycle:
New from this manufacturer.
Datasheet:
SCT2750NYTB Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCT2750NYTB more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
SMD/SMT
Package / Case:
TO-268-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1700 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
750 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.6 V
Vgs - Gate-Source Voltage:
- 6 V, 22 V
Qg - Gate Charge:
17 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
57 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
SCT2x
Transistor Type:
1 N-Channel
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
600 mS
Fall Time:
63 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
41 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
SCT2750NY
Unit Weight:
0.141096 oz
Tags
SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1700 V 0.75 Ohm Surface Mount SiC Power Mosfet - TO-268-2
***et
MOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm, 6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13T&R 800"
***ical
Trans MOSFET N-CH SiC 1.7KV 5.9A 3-Pin(2+Tab) TO-268L T/R
***Components
MOSFET N-CH 1700V 6A SIC TO-268-2L
***ronik
SiC-N 1700V 750mOhm 6A TO268
***ark
1700V, .75 OHM 6A SIC FET
***i-Key
1700V .75 OHM 6A SIC FET
***
N-CH SIC PWR MOSF 1.7KV
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.7KV, 6A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.75ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 1,7KV, 6A, TO-268; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:1.7kV; Resistenza di Attivazione Rds(on):0.75ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:TO-268; No. di Pin:2Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Part # Mfg. Description Stock Price
SCT2750NYTB
DISTI # 33952740		ROHM Semiconductor0800
  • 4:$7.1375
SCT2750NYTB
DISTI # SCT2750NYTBCT-ND		ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1783In Stock
  • 100:$4.6798
  • 25:$5.3996
  • 10:$5.7120
  • 1:$6.3600
SCT2750NYTB
DISTI # SCT2750NYTBDKR-ND		ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1783In Stock
  • 100:$4.6798
  • 25:$5.3996
  • 10:$5.7120
  • 1:$6.3600
SCT2750NYTB
DISTI # SCT2750NYTBTR-ND		ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 400
Container: Tape & Reel (TR)		1600In Stock
  • 2000:$3.0989
  • 1200:$3.2620
  • 800:$3.8678
  • 400:$4.3105
SCT2750NYTB
DISTI # C1S625901693423		ROHM SemiconductorMOSFETs800
  • 500:$3.0100
  • 200:$3.4200
  • 50:$3.6500
  • 10:$4.8600
  • 1:$5.7100
SCT2750NYTB
DISTI # SCT2750NYTB		ROHM SemiconductorMOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm,6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13"T&R 800 - Tape and Reel (Alt: SCT2750NYTB)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 800
    SCT2750NYTB
    DISTI # SCT2750NYTB    		ROHM SemiconductorMOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm,6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13"T&R 800 (Alt: SCT2750NYTB)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Europe - 0
    • 8000:€3.8900
    • 4800:€4.1900
    • 3200:€4.4900
    • 1600:€4.6900
    • 800:€4.8900
    SCT2750NYTB
    DISTI # 28AC1982    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):0.75ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes786
    • 250:$4.3900
    • 100:$4.6200
    • 50:$4.8600
    • 25:$5.1600
    • 10:$5.3900
    • 1:$6.2200
    SCT2750NYTB
    DISTI # 755-SCT2750NYTB    		ROHM SemiconductorMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    RoHS: Compliant    		1384
    • 1:$6.1600
    • 10:$5.2400
    • 100:$4.5400
    • 250:$4.3100
    • 400:$3.8600
    • 800:$3.2600
    • 2400:$3.0900
    SCT2750NYTBROHM Semiconductor 1
    • 2:$8.0750
    • 1:$9.6900
    SCT2750NYTB
    DISTI # TMOS1871    		ROHM SemiconductorSiC-N 1700V 750mOhm 6A TO268
    RoHS: Compliant    		Stock DE - 800Stock HK - 0Stock US - 0
    • 800:$6.6400
    SCT2750NYTB
    DISTI # 2772413    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268
    RoHS: Compliant    		782
    • 25:$8.1400
    • 10:$8.6100
    • 1:$9.5800
    SCT2750NYTBROHM SemiconductorMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    RoHS: Compliant    		Americas - 1600
      SCT2750NYTB
      DISTI # 2772413      		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268789
      • 100:£3.7300
      • 50:£3.8700
      • 10:£4.0000
      • 5:£4.7000
      • 1:£5.1800
      SCT2750NYTBROHM SemiconductorRoHS(ship within 1day)2
      • 1:$6.3700
      • 10:$4.7800
      • 50:$4.2100
      • 100:$3.6000
      • 500:$3.3400
      • 1000:$3.2300
      Image Part # Description
      IKQ75N120CT2XKSA1

      Mfr.#: IKQ75N120CT2XKSA1

      OMO.#: OMO-IKQ75N120CT2XKSA1

      		 IGBT Transistors IGBT PRODUCTS
      VS-8EWS16SLHM3

      Mfr.#: VS-8EWS16SLHM3

      OMO.#: OMO-VS-8EWS16SLHM3

      		 Rectifiers 8A If, 1600V Vr TO-252AA (DPAK)
      SCT10N120

      Mfr.#: SCT10N120

      OMO.#: OMO-SCT10N120

      		 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
      SCT2H12NYTB

      Mfr.#: SCT2H12NYTB

      OMO.#: OMO-SCT2H12NYTB

      		 MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
      C3M0075120J

      Mfr.#: C3M0075120J

      OMO.#: OMO-C3M0075120J

      		 MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
      C2M1000170J

      Mfr.#: C2M1000170J

      OMO.#: OMO-C2M1000170J

      		 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
      T9GS1L14-5

      Mfr.#: T9GS1L14-5

      OMO.#: OMO-T9GS1L14-5

      		 General Purpose Relays Relay
      C2M1000170J

      Mfr.#: C2M1000170J

      OMO.#: OMO-C2M1000170J-WOLFSPEED

      		 MOSFET N-CH 1700V 5.3A TO247
      VS-8EWS16SLHM3

      Mfr.#: VS-8EWS16SLHM3

      OMO.#: OMO-VS-8EWS16SLHM3-VISHAY

      		 DIODES - D-PAK-E3
      MGJ1D121905MPC-R7

      Mfr.#: MGJ1D121905MPC-R7

      OMO.#: OMO-MGJ1D121905MPC-R7-MURATA-POWER-SOLUTIONS

      		 DC/DC 1W TH 12-19/5V 5.2KV
      Availability
      Stock:
      Available
      On Order:
      1985
      Enter Quantity:
      Current price of SCT2750NYTB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $6.16
      $6.16
      10
      $5.24
      $52.40
      100
      $4.54
      $454.00
      250
      $4.31
      $1 077.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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