SCT10N120

Mfr. #:: SCT10N120
Manufacturer:: STMicroelectronics
Description:: MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Lifecycle:: New from this manufacturer.
Datasheet:: SCT10N120 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SCT10N120 more Information SCT10N120 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: SiC

Mounting Style:: Through Hole

Package / Case:: HiP-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 1.2 kV

Id - Continuous Drain Current:: 12 A

Rds On - Drain-Source Resistance:: 500 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.8 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 22 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 200 C

Pd - Power Dissipation:: 150 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: HiP247â?¢

Packaging:: Tube

Series:: SCT10N120

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 17 ns

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 600

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 14 ns

Typical Turn-On Delay Time:: 7 ns

Tags: SCT10, SCT1, SCT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT10N120 Description

***ure Electronics: N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247

***ical: Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube

***et: Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube

***i-Key: MOSFET N-CH 1.2KV TO247-3

***ronik: SiC-N 1200V 12A 690mOhm HiP247

***ark: Mosfet, N-Ch, 1.2Kv, 12A, 150W, Hip247; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:150W; Transistor Case Style:HiP247; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, CA-N, 1,2KV, 12A, 150W, HIP247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.5ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:HiP247; No. di Pin:3Pin; Temperatura di Esercizio Max:200°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

SCT10N120 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs: STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.

Market price

Part #	Mfg.	Description	Stock	Price
SCT10N120 DISTI # V99:2348_17630036	STMicroelectronics	Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	482	1000:$6.8350 500:$7.4480 250:$7.6380 100:$8.3110 25:$9.4770 10:$9.8920 1:$10.7400
SCT10N120 DISTI # V36:1790_16518943	STMicroelectronics	Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	0
SCT10N120 DISTI # 497-16597-5-ND	STMicroelectronics	MOSFET N-CH 1.2KV TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	243In Stock	600:$7.8257 100:$8.7971 25:$9.9844 10:$10.4160 1:$11.3300
SCT10N120 DISTI # 25948587	STMicroelectronics	Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	482	1:$10.7400
SCT10N120 DISTI # SCT10N120	STMicroelectronics	Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube (Alt: SCT10N120) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 94	1000:€6.1900 500:€6.5900 100:€6.8900 50:€7.1900 25:€7.3900 10:€7.7900 1:€8.4900
SCT10N120 DISTI # SCT10N120	STMicroelectronics	Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube - Bulk (Alt: SCT10N120) RoHS: Compliant Min Qty: 600 Container: Bulk	Americas - 0	6000:$6.4900 3000:$6.6900 1800:$6.9900 1200:$7.2900 600:$7.6900
SCT10N120H DISTI # SCT10N120H	STMicroelectronics	- Tape and Reel (Alt: SCT10N120H) Min Qty: 1000 Container: Reel	Americas - 0	10000:$5.4900 6000:$5.6900 4000:$5.8900 2000:$6.1900 1000:$6.4900
SCT10N120 DISTI # 97Y9494	STMicroelectronics	PTD WBG & POWER RF	0	1:$6.4300
SCT10N120H DISTI # 59AC7246	STMicroelectronics	PTD WBG & POWER RF	0	1:$5.4800
SCT10N120 DISTI # 511-SCT10N120	STMicroelectronics	MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package RoHS: Compliant	328	1:$10.7900 10:$9.9300 25:$9.5100 100:$8.3800 250:$7.9700 500:$7.4600 1000:$6.8400
SCT10N120H DISTI # 511-SCT10N120H	STMicroelectronics	MOSFET	0	1000:$5.9200
SCT10N120 DISTI # TMOSP12812	STMicroelectronics	SiC-N 1200V 12A 690mOhm HiP247 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	600:$7.8800
SCT10N120 DISTI # 3129687	STMicroelectronics	MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247 RoHS: Compliant	0	250:$9.1200 100:$10.5800 50:$11.2400 10:$11.8200 5:$13.5200 1:$14.3600
SCT10N120 DISTI # 3129687	STMicroelectronics	MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247	600	100:£6.2700 50:£6.7000 10:£7.1200 5:£8.0700 1:£8.6000

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	Mfr.#: SCT2750NYTB OMO.#: OMO-SCT2750NYTB	MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
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	Mfr.#: C2M0280120D OMO.#: OMO-C2M0280120D	MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
	Mfr.#: UJ3C120080K3S OMO.#: OMO-UJ3C120080K3S	MOSFET 1200V/80mOhm SiC CASCODE G3
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Availability

Stock:: 328
On Order:: 2311
Enter Quantity:

Current price of SCT10N120 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$10.79~~; ~~$10.79~~

10: ~~$9.93~~; ~~$99.30~~

25: ~~$9.51~~; ~~$237.75~~

100: ~~$8.38~~; ~~$838.00~~

250: ~~$7.97~~; ~~$1 992.50~~

500: ~~$7.46~~; ~~$3 730.00~~

1000: ~~$6.84~~; ~~$6 840.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SCT10N120

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes