TK4R3E06PL,S1X

TK4R3E06PL,S1X
Mfr. #:
TK4R3E06PL,S1X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
Lifecycle:
New from this manufacturer.
Datasheet:
TK4R3E06PL,S1X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK4R3E06PL,S1X DatasheetTK4R3E06PL,S1X Datasheet (P4-P6)TK4R3E06PL,S1X Datasheet (P7-P9)
ECAD Model:
More Information:
TK4R3E06PL,S1X more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
106 A
Rds On - Drain-Source Resistance:
3.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
48.2 nC
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
87 W
Configuration:
Single
Channel Mode:
Enhancement
Height:
15.1 mm
Length:
10.16 mm
Transistor Type:
1 N-Channel
Width:
4.45 mm
Brand:
Toshiba
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
24 ns
Unit Weight:
0.063493 oz
Tags
TK4R3E, TK4R3, TK4R, TK4
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***c
    D***c
    RU

    Ok.

    2019-04-22
    Y***v
    Y***v
    RU

    The order went a little more than a month.Packed neatly, all declared denominations are present.Thanks to the seller for the accuracy and excellent product.I recommend this store to everyone!

    2019-03-28
    W***s
    W***s
    NZ

    All good

    2019-04-03
    S***a
    S***a
    RU

    Everything works

    2019-07-06
***ark
X35 Pb-F Power Mosfet Transistor To-220 Pd=87W F=1Mhz Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220 Tube
U-MOSIX-H Low Voltage Enhancement Mode MOSFETs
Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.Learn More
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Availability
Stock:
22
On Order:
2005
Enter Quantity:
Current price of TK4R3E06PL,S1X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.59
$1.59
10
$1.27
$12.70
100
$1.11
$111.00
500
$0.86
$431.50
1000
$0.68
$681.00
2500
$0.60
$1 510.00
10000
$0.53
$5 270.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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