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TK4R3E06PL,S1X
P1-P3
P4-P6
P7-P9
TK4R3E06PL
4
6.4.
6.4.
6.4.
6.4.
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 5)
Symbol
I
DRP
(t = 100
µ
s)
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 80 A, V
GS
= 0 V
I
DR
= 20 A, V
GS
= 0 V,
-dI
DR
/dt = 100 A/
µ
s
Min
Typ.
47
57
Max
350
-1.5
Unit
A
V
ns
nC
Note 5:
Ensure that the channel temperature does not exceed 175
.
7.
7.
7.
7.
Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig.
7.1
7.1
7.1
7.1
Marking
Marking
Marking
Marking
2016-11-14
Rev.1.0
©2016 Toshiba Corporation
TK4R3E06PL
5
8.
8.
8.
8.
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig.
8.1
8.1
8.1
8.1
I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig.
8.2
8.2
8.2
8.2
I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig.
8.3
8.3
8.3
8.3
I
I
I
I
D
D
D
D
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig.
8.4
8.4
8.4
8.4
V
V
V
V
DS
DS
DS
DS
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig.
8.5
8.5
8.5
8.5
R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- I
- I
- I
- I
D
D
D
D
Fig.
Fig.
Fig.
Fig.
8.6
8.6
8.6
8.6
I
I
I
I
DR
DR
DR
DR
- V
- V
- V
- V
DS
DS
DS
DS
2016-11-14
Rev.1.0
©2016 Toshiba Corporation
TK4R3E06PL
6
Fig.
Fig.
Fig.
Fig.
8.7
8.7
8.7
8.7
V
V
V
V
(BR)DSS
(BR)DSS
(BR)DSS
(BR)DSS
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig.
8.8
8.8
8.8
8.8
V
V
V
V
th
th
th
th
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig.
8.9
8.9
8.9
8.9
R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig.
8.10
8.10
8.10
8.10
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig.
8.11
8.11
8.11
8.11
Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig.
8.12
8.12
8.12
8.12
Q
Q
Q
Q
oss
oss
oss
oss
- V
- V
- V
- V
DS
DS
DS
DS
2016-11-14
Rev.1.0
©2016 Toshiba Corporation
P1-P3
P4-P6
P7-P9
TK4R3E06PL,S1X
Mfr. #:
Buy TK4R3E06PL,S1X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
Lifecycle:
New from this manufacturer.
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TK4R3E06PL,S1X