IPB79CN10N G

Mfr. #:: IPB79CN10N G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 13A D2PAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB79CN10N G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 13 A

Rds On - Drain-Source Resistance:: 79 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 31 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 3 ns

Product Type:: MOSFET

Rise Time:: 4 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 13 ns

Typical Turn-On Delay Time:: 9 ns

Part # Aliases:: IPB79CN10NGXT

Unit Weight:: 0.139332 oz

Tags: IPB79, IPB7, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB79CN10N G Description

***etEurope: TransMOSFETNCH100V13A3Pin2TabTO263

***iKey: MOSFETNCH100V13ATO2633

***nell: MOSFETNCH13A100VPGTO2633;TransistorPolarityNChannel;ContinuousDrainCurrentId13A;DrainSourceVoltageVds100V;OnResistanceRdson0061ohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgs3V;PowerDissipationPd31W;TransistorCaseStyleTO263;NoofPins3Pins;OperatingTemperatureMax175C;ProductRange;AutomotiveQualificationStandard;MSLMSL1Unlimited;SVHCNoSVHC27Jun2018;CurrentIdMax13A;OperatingTemperatureMin55C;OperatingTemperatureRange55Cto175C;TransistorTypePowerMOSFET;VoltageVgsMax20V

Market price

Part #	Mfg.	Description	Stock	Price
IPB79CN10N G DISTI # IPB79CN10NG-ND	Infineon Technologies AG	MOSFET N-CH 100V 13A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB79CN10N G DISTI # 726-IPB79CN10NG	Infineon Technologies AG	MOSFET N-Ch 100V 13A D2PAK-2 RoHS: Compliant	0
IPB79CN10N G DISTI # 1775564	Infineon Technologies AG	MOSFET, N CH, 13A, 100V, PG-TO263-3 RoHS: Compliant	0	250:$0.8170 100:$0.9140 25:$1.1300 1:$1.3700

Image	Part #	Description
	Mfr.#: IPB79CN10N G OMO.#: OMO-IPB79CN10N-G	MOSFET N-Ch 100V 13A D2PAK-2
	Mfr.#: IPB79CN10N OMO.#: OMO-IPB79CN10N-1190	New and Original
	Mfr.#: IPB79CN10N G OMO.#: OMO-IPB79CN10N-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 13A TO263-3
	Mfr.#: IPB79CN10NG OMO.#: OMO-IPB79CN10NG-1190	New and Original

IPB79CN10N G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes