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IPI034NE7N3 G

IPI034NE7N3 G
Mfr. #:
IPI034NE7N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI034NE7N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3.4 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
88 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
214 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Tube
Height:
9.45 mm
Length:
10.2 mm
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
85 nS
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 nS
Part # Aliases:
IPI034NE7N3GAKSA1 SP000641734
Unit Weight:
0.084199 oz
Tags
IPI034NE7N3G, IPI034, IPI03, IPI0, IPI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 75V 100A 3-Pin TO-262 Tube
*** Electronic Components
IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
***
N-Channel 75 V 1A (Tc) 214W (Tc) Through Hole PG-TO262-3
Part # Mfg. Description Stock Price
IPI034NE7N3 G
DISTI # IPI034NE7N3G-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPI034NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		7459
    • 1000:$1.2700
    • 500:$1.3300
    • 100:$1.3900
    • 25:$1.4500
    • 1:$1.5600
    IPI034NE7N3GAKSA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		498
    • 1:$0.0200
    • 25:$0.0200
    • 100:$0.0200
    • 500:$0.0200
    • 1000:$0.0200
    IPI034NE7N3 G
    DISTI # 726-IPI034NE7N3G    		Infineon Technologies AGMOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
    RoHS: Compliant    		0
      Image Part # Description
      IPI034NE7N3 G

      Mfr.#: IPI034NE7N3 G

      OMO.#: OMO-IPI034NE7N3-G

      		 MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      IPI034NE7N3GAKSA1

      Mfr.#: IPI034NE7N3GAKSA1

      OMO.#: OMO-IPI034NE7N3GAKSA1-1190

      		 Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI034NE7N3

      Mfr.#: IPI034NE7N3

      OMO.#: OMO-IPI034NE7N3-1190

      		 New and Original
      IPI034NE7N3G

      Mfr.#: IPI034NE7N3G

      OMO.#: OMO-IPI034NE7N3G-1190

      		 Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI034NE7N3G(034NE7N)

      Mfr.#: IPI034NE7N3G(034NE7N)

      OMO.#: OMO-IPI034NE7N3G-034NE7N--1190

      		 New and Original
      IPI034NE7N3GS

      Mfr.#: IPI034NE7N3GS

      OMO.#: OMO-IPI034NE7N3GS-1190

      		 New and Original
      IPI034NE7N3 G

      Mfr.#: IPI034NE7N3 G

      OMO.#: OMO-IPI034NE7N3-G-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of IPI034NE7N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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