DMT6004LPS-13

Mfr. #:: DMT6004LPS-13
Manufacturer:: Diodes Incorporated
Description:: MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W
Lifecycle:: New from this manufacturer.
Datasheet:: DMT6004LPS-13 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: DMT6004LPS-13 more Information

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerDI5060-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 90 A

Rds On - Drain-Source Resistance:: 2.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 96.3 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.1 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: PowerDI

Packaging:: Reel

Height:: 1 mm

Length:: 5.8 mm

Series:: DMT6004

Transistor Type:: 1 N-Channel

Width:: 4.9 mm

Brand:: Diodes Incorporated

Fall Time:: 32.9 ns

Product Type:: MOSFET

Rise Time:: 17.7 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 53.5 ns

Typical Turn-On Delay Time:: 9.9 ns

Unit Weight:: 0.003386 oz

Tags: DMT6004, DMT600, DMT60, DMT6, DMT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMT6004LPS-13 Description

***ark: Mosfet, N-Ch, 60V, 100A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMT6004LPS-13

***ical: Trans MOSFET N-CH 60V 22A 8-Pin PowerDI 5060 T/R

***des Inc SCT: 60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***et: MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K

***S: French Electronic Distributor since 1988

***ronik: N-CH 60V 90A 3,1mOhm PwDI5060-8

***ure Electronics: 60V, 100A, 3.1mohm, N-Channel, PowerDI5060-8, Enhancement Mode Mosfet

***des Inc SCT: 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ical: Trans MOSFET N-CH 60V 22A 8-Pin PowerDI EP T/R

***et: MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K

***ronik: N-CH 60V 100A 3,1mOhm PwDI5060

***el Electronic: MOSFET N-CH 60V 22A PWRDI5060-8

***ark: Mosfet, Aec-Q101, N-Ch, 100A, 60V; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Diodes Inc. DMTH6004LPS-13

***emi: PowerTrench® MOSFET, N-Channel, 60 V, 100 A, 3.2 mΩ

***ical: Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, AEC-Q101, NCH, 100A, 60V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.9V; Power Dissipation Pd: 227W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 60V 25A Automotive 8-Pin PowerDI EP T/R

***des Inc SCT: 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***et: MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K

*** Electronics: MOSFET N-CH 60V 100A PWRDI5060-8

***ark: Mosfet, N-Ch, 60V, 100A, To-263Ab Rohs Compliant: Yes |Diodes Inc. DMTH6004SCTB-13

***ical: Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R

***des Inc SCT: 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ure Electronics: MOSFET Enh Mode FET 41V to 60V TO263

*** Electronics: INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew

***ure Electronics: Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 60V, 100A, 4.1mOhm, 67 nC Qg, PQFN5x6 | Infineon IRFH5006TRPBF

***Yang: Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***nell: MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***Yang: Trans MOSFET N-CH 60V 23A 8-Pin PQFN T/R - Product that comes on tape, but is not reeled

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***ure Electronics: Single N-Channel 60 V 3.2 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

*** Source Electronics: MOSFET N-CH 60V 23A 6-PQFN / Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N-CH, 60V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: -; Transistor Case Style: QFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

DMT6004LPS-13 More Information

DMTx MOSFETs: Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

Gate Drivers: Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

Market price

Part #	Mfg.	Description	Stock	Price
DMT6004LPS-13 DISTI # 32011522	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 22A Automotive 8-Pin PowerDI 5060 T/R	50000	2500:$0.8750
DMT6004LPS-13 DISTI # DMT6004LPS-13DICT-ND	Diodes Incorporated	MOSFET N-CH 60V 22A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6472In Stock	1000:$0.6798 500:$0.8611 100:$1.0424 10:$1.3370 1:$1.5000
DMT6004LPS-13 DISTI # DMT6004LPS-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 60V 22A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6472In Stock	1000:$0.6798 500:$0.8611 100:$1.0424 10:$1.3370 1:$1.5000
DMT6004LPS-13 DISTI # DMT6004LPS-13DITR-ND	Diodes Incorporated	MOSFET N-CH 60V 22A RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	5000:$0.5852 2500:$0.6160
DMT6004LPS-13 DISTI # V36:1790_13884712	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 22A Automotive 8-Pin PowerDI 5060 T/R	0	2500000:$0.5333 1250000:$0.5336 250000:$0.5602 25000:$0.6080 2500:$0.6160
DMT6004LPS-13 DISTI # DMT6004LPS-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K - Tape and Reel (Alt: DMT6004LPS-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.5609 15000:$0.5739 10000:$0.6009 5000:$0.6309 2500:$0.6629
DMT6004LPS-13 DISTI # DMT6004LPS-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K (Alt: DMT6004LPS-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Europe - 0	25000:€0.6389 15000:€0.6689 10000:€0.6799 5000:€0.6899 2500:€0.7259
DMT6004LPS-13 DISTI # DMT6004LPS-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K (Alt: DMT6004LPS-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Asia - 0	125000:$0.7949 62500:$0.8158 25000:$0.8378 12500:$0.8493 7500:$0.8732 5000:$0.9118 2500:$0.9538
DMT6004LPS-13 DISTI # 621-DMT6004LPS-13	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W RoHS: Compliant	3601	1:$1.4400 10:$1.2300 100:$0.9470 500:$0.8370 1000:$0.6600
DMT6004LPS-13 DISTI # TMOS2095	Diodes Incorporated	N-CH 60V 90A 3,1mOhm PwDI5060-8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2500:$0.9711 5000:$0.8601

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of DMT6004LPS-13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.44~~; ~~$1.44~~

10: ~~$1.23~~; ~~$12.30~~

100: ~~$0.95~~; ~~$94.70~~

500: ~~$0.84~~; ~~$418.50~~

1000: ~~$0.66~~; ~~$660.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes