PartNumber | DMT6002LPS-13 | DMT6004LPS-13 | DMT6004SCT |
Description | MOSFET MOSFET BVDSS 41V-60V | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | MOSFET MOSFET BVDSS: 41V-60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | PowerDI5060-8 | PowerDI5060-8 | TO-220-3 |
Packaging | Reel | Reel | Tube |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.003386 oz | 0.003386 oz | 0.063493 oz |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Id Continuous Drain Current | - | 90 A | - |
Rds On Drain Source Resistance | - | 2.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 96.3 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 2.1 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Tradename | - | PowerDI | - |
Height | - | 1 mm | - |
Length | - | 5.8 mm | - |
Series | - | DMT6004 | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 4.9 mm | - |
Fall Time | - | 32.9 ns | - |
Rise Time | - | 17.7 ns | - |
Typical Turn Off Delay Time | - | 53.5 ns | - |
Typical Turn On Delay Time | - | 9.9 ns | - |