DMT6009LJ3

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

74.5 A

Rds On - Drain-Source Resistance:

12.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

700 mV

Vgs - Gate-Source Voltage:

16 V

Qg - Gate Charge:

33.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

83.3 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

15.7 ns

Product Type:

MOSFET

Rise Time:

8.6 ns

Factory Pack Quantity:

75

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35.9 ns

Typical Turn-On Delay Time:

4.5 ns

Tags

DMT6009, DMT600, DMT60, DMT6, DMT