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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSC091N03MSC G DISTI # 726-BSC091N03MSCG | Infineon Technologies AG | MOSFET N-Ch 30V 12A TDSON-8 RoHS: Compliant | 0 | |
| BSC091N03MSCGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 35000 |
|
| BSC091N03MSCG | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 15000 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSC090N03LS G OMO.#: OMO-BSC090N03LS-G |
MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC0909NS OMO.#: OMO-BSC0909NS |
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS |
|
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Mfr.#: BSC0924NDIATMA1 OMO.#: OMO-BSC0924NDIATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC090N03LS G OMO.#: OMO-BSC090N03LS-G-1190 |
Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G) |
|
|
Mfr.#: BSC091N03MSCG OMO.#: OMO-BSC091N03MSCG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
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Mfr.#: BSC0923NDI , TDZ TR 24 , |
New and Original |
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Mfr.#: BSC093N04LS G OMO.#: OMO-BSC093N04LS-G-1190 |
Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G) |
|
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Mfr.#: BSC097N06NS OMO.#: OMO-BSC097N06NS-1190 |
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP (Alt: BSC097N06NS) |
|
Mfr.#: BSC0911NDATMA1 |
MOSFET 2N-CH 25V 18A/30A TISON-8 |
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Mfr.#: BSC0910NDIATMA1 |
MOSFET LV POWER MOS |