 | | | |
| PartNumber | BSC0911ND | BSC0910NDI | BSC0910NDIATMA1 |
| Description | MOSFET N-Ch 25V 40A TISON-8 | MOSFET TRANSITIONAL MOSFETS | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TISON-8 | PG-TISON-8 | TISON-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 2.5 mOhms, 900 uOhms | 1.2 mOhms, 4.6 mOhms | 3.5 mOhms, 900 uOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 12 nC, 37 nC | 5 nC, 23 nC | 6.6 nC, 30.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 38 S, 65 S | 42 S, 85 S | 42 S, 85 S |
| Fall Time | 2.2 ns, 4 ns | 2.4 ns, 4.1 ns | 2.4 ns, 4.1 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.8 ns, 5.4 ns | 3.6 ns, 5.6 ns | 3.6 ns, 5.6 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns, 25 ns | 13 ns, 28 ns | 13 ns, 28 ns |
| Typical Turn On Delay Time | 3.3 ns, 3.8 ns | 2.4 ns, 5.6 ns | 2.4 ns, 5.6 ns |
| Part # Aliases | BSC0911NDATMA1 BSC911NDXT SP000934746 | BSC0910NDIATMA1 SP000998052 | BSC0910NDI SP000998052 |
| Unit Weight | - | 0.003591 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC0911NDATMA1 | MOSFET N-Ch 25V 40A TISON-8 | |
| BSC0911ND | MOSFET N-Ch 25V 40A TISON-8 | ||
| BSC0910NDI | MOSFET TRANSITIONAL MOSFETS | ||
| BSC0910NDIATMA1 | MOSFET LV POWER MOS | ||
| BSC0911NDATMA1 | MOSFET 2N-CH 25V 18A/30A TISON-8 | ||
| BSC0910NDIATMA1 | MOSFET LV POWER MOS | ||
| BSC0910NDI | Trans MOSFET N-CH 25V 11A/22A 8-Pin TISON T/R (Alt: BSC0910NDI) | ||
| BSC0911ND | Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R (Alt: BSC0911ND) | ||
| BSC0911ND 0911ND | New and Original | ||
| BSC091N03MS | New and Original | ||
| BSC091N03MSC | New and Original | ||
| BSC091N03MSC G | MOSFET N-Ch 30V 12A TDSON-8 | ||
| BSC091N03MSCG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC091N03MSCGATMA1 | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |