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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSC091N03MSCG | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 15000 |
|
| BSC091N03MSCGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 35000 |
|
| BSC091N03MSC G DISTI # 726-BSC091N03MSCG | Infineon Technologies AG | MOSFET N-Ch 30V 12A TDSON-8 RoHS: Compliant | 0 |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSC091N03MS OMO.#: OMO-BSC091N03MS-1190 |
New and Original |
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Mfr.#: BSC091N03MSC OMO.#: OMO-BSC091N03MSC-1190 |
New and Original |
|
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Mfr.#: BSC091N03MSC G OMO.#: OMO-BSC091N03MSC-G-1190 |
MOSFET N-Ch 30V 12A TDSON-8 |
|
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Mfr.#: BSC091N03MSCG OMO.#: OMO-BSC091N03MSCG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC091N03MSCGATMA1 OMO.#: OMO-BSC091N03MSCGATMA1-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |