BSC0910NDIATMA1

BSC0910NDIATMA1
Mfr. #:
BSC0910NDIATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSC0910NDIATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TISON-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
3.5 mOhms, 900 uOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
6.6 nC, 30.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
2 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
42 S, 85 S
Fall Time:
2.4 ns, 4.1 ns
Product Type:
MOSFET
Rise Time:
3.6 ns, 5.6 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13 ns, 28 ns
Typical Turn-On Delay Time:
2.4 ns, 5.6 ns
Part # Aliases:
BSC0910NDI SP000998052
Tags
BSC091, BSC09, BSC0, BSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-Channel 25V 16A/31A 8-Pin TISON T/R
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TISON-8, RoHS
***ark
Mosfet, Dual N-Ch, 25V, 40A, Tison-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Part # Mfg. Description Stock Price
BSC0910NDIATMA1
DISTI # V72:2272_06383104
Infineon Technologies AGTrans MOSFET N-CH 25V 22A/36A 8-Pin TISON EP T/R
RoHS: Compliant
3313
  • 3000:$0.8897
  • 1000:$0.9307
  • 500:$1.1302
  • 250:$1.2318
  • 100:$1.3160
  • 25:$1.6032
  • 10:$1.6870
  • 1:$2.1954
BSC0910NDIATMA1
DISTI # V36:1790_06383104
Infineon Technologies AGTrans MOSFET N-CH 25V 22A/36A 8-Pin TISON EP T/R
RoHS: Compliant
0
    BSC0910NDIATMA1
    DISTI # BSC0910NDIATMA1-ND
    Infineon Technologies AGMOSFET 2N-CH 25V 16A/31A TISON8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 5000:$0.9743
    BSC0910NDIATMA1
    DISTI # 26612594
    Infineon Technologies AGTrans MOSFET N-CH 25V 22A/36A 8-Pin TISON EP T/R
    RoHS: Compliant
    3313
    • 3000:$0.9564
    • 1000:$1.0005
    • 500:$1.2150
    • 250:$1.3242
    • 100:$1.4147
    • 25:$1.7234
    • 10:$1.8135
    BSC0910NDIATMA1
    DISTI # BSC0910NDIATMA1
    Infineon Technologies AGTrans MOSFET N-CH 25V 16A/31A 8-Pin TISON T/R - Tape and Reel (Alt: BSC0910NDIATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.6919
    • 30000:$0.7049
    • 20000:$0.7289
    • 10000:$0.7559
    • 5000:$0.7849
    BSC0910NDIATMA1
    DISTI # 49AC0106
    Infineon Technologies AGMOSFET, DUAL N-CH, 25V, 40A, TISON-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes4610
    • 1000:$0.9980
    • 500:$1.2000
    • 250:$1.2900
    • 100:$1.3700
    • 50:$1.4900
    • 25:$1.6000
    • 10:$1.7200
    • 1:$2.0200
    BSC0910NDIATMA1
    DISTI # 726-BSC0910NDIATMA1
    Infineon Technologies AGMOSFET LV POWER MOS5000
    • 1:$2.0000
    • 10:$1.7000
    • 100:$1.3600
    • 500:$1.1900
    • 1000:$0.9880
    • 2500:$0.9200
    • 5000:$0.8860
    BSC0910NDI
    DISTI # 726-BSC0910NDI
    Infineon Technologies AGMOSFET TRANSITIONAL MOSFETS
    RoHS: Compliant
    80
    • 1:$2.0000
    • 10:$1.7000
    • 100:$1.3600
    • 500:$1.1900
    • 1000:$0.9880
    • 2500:$0.9200
    • 5000:$0.8860
    BSC0910NDIATMA1
    DISTI # 2839431
    Infineon Technologies AGMOSFET, DUAL N-CH, 25V, 40A, TISON-8
    RoHS: Compliant
    4610
    • 100:$2.2000
    • 25:$2.6900
    • 5:$3.0900
    BSC0910NDIATMA1
    DISTI # 2839431
    Infineon Technologies AGMOSFET, DUAL N-CH, 25V, 40A, TISON-84620
    • 100:£1.3000
    • 10:£1.6500
    • 1:£2.1800
    Image Part # Description
    BSC0910NDI

    Mfr.#: BSC0910NDI

    OMO.#: OMO-BSC0910NDI

    MOSFET TRANSITIONAL MOSFETS
    BSC0910NDIATMA1

    Mfr.#: BSC0910NDIATMA1

    OMO.#: OMO-BSC0910NDIATMA1

    MOSFET LV POWER MOS
    BSC0910NDI

    Mfr.#: BSC0910NDI

    OMO.#: OMO-BSC0910NDI-1190

    Trans MOSFET N-CH 25V 11A/22A 8-Pin TISON T/R (Alt: BSC0910NDI)
    BSC0910NDIATMA1

    Mfr.#: BSC0910NDIATMA1

    OMO.#: OMO-BSC0910NDIATMA1-INFINEON-TECHNOLOGIES

    MOSFET LV POWER MOS
    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of BSC0910NDIATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.00
    $2.00
    10
    $1.70
    $17.00
    100
    $1.36
    $136.00
    500
    $1.19
    $595.00
    1000
    $0.99
    $988.00
    2500
    $0.92
    $2 300.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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