IXFT24N80P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

24 A

Rds On - Drain-Source Resistance:

400 mOhms

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

100 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

650 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

5.1 mm

Length:

16.05 mm

Series:

IXFT24N80

Transistor Type:

1 N-Channel

Width:

14 mm

Brand:

IXYS

Fall Time:

24 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

75 ns

Typical Turn-On Delay Time:

32 ns

Unit Weight:

0.158733 oz

Tags

IXFT24, IXFT2, IXFT, IXF