BSZ0909NSATMA1

Mfr. #:: BSZ0909NSATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 34V 9A 8TSDSON
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ0909NSATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Tags: BSZ0909NS, BSZ0909, BSZ090, BSZ09, BSZ0, BSZ

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BSZ0909NSATMA1 Description

***ure Electronics: Single N-Channel 34 V 12 mOhm 13 nC OptiMOS Power Mosfet - TSDSON-8

***nell: MOSFET, N-CH, 34V, 36A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 34V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 25W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

*** Electronics: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ark: N CH POWER MOSFET, HEXFET, 30V, 14A, PQFN-8; Transistor Polarity:N Channel; Cont

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***ure Electronics: Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

*** Source Electronics: Trans MOSFET N-CH 30V 14A 8-Pin QFN EP T/R / MOSFET N-CH 30V 44A 5X6 PQFN

***nell: MOSFET, N-CH, 30V, 44A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 30W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ure Electronics: N-Channel 30 V 44 A 9.2 mO 15 nC SMT OptiMOS Power Mosfet - TDSON-8

***nell: MOSFET, N-CH, 34V, 44A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 34V; On Resistance Rds(on): 0.0077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 27W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***roFlash: Trans MOSFET N-CH 30V 13.1A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: N-Channel 30V 13.1A (Ta), 43A (Tc) 1.6W (Ta) Surface Mount TO-252-3

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***emi: 30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL

***r Electronics: Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 30V 7.4A/35A 5DFN

***el Electronic: RES SMD 392 OHM 1% 1/4W 1210

***emi: 30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL

***Yang: Trans MOSFET N-CH 30V 20A 8-Pin SO-8 FL T/R - Tape and Reel

***ponent Stockers USA: 7.4 A 30 V 0.013 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Market price

Part #	Mfg.	Description	Stock	Price
BSZ0909NSATMA1 DISTI # V72:2272_06391041	Infineon Technologies AG	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R RoHS: Compliant	4475	3000:$0.2562 1000:$0.2590 500:$0.3265 250:$0.3958 100:$0.4353 25:$0.5533 10:$0.6315 1:$0.7233
BSZ0909NSATMA1 DISTI # V36:1790_06391041	Infineon Technologies AG	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.1821 2500000:$0.1823 500000:$0.1959 50000:$0.2180 5000:$0.2216
BSZ0909NSATMA1 DISTI # BSZ0909NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 34V 9A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4900In Stock	1000:$0.2705 500:$0.3381 100:$0.4277 10:$0.5580 1:$0.6300
BSZ0909NSATMA1 DISTI # BSZ0909NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 34V 9A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4900In Stock	1000:$0.2705 500:$0.3381 100:$0.4277 10:$0.5580 1:$0.6300
BSZ0909NSATMA1 DISTI # BSZ0909NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 34V 9A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2079 10000:$0.2134 5000:$0.2216
BSZ0909NSATMA1 DISTI # 32892484	Infineon Technologies AG	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.1666
BSZ0909NSATMA1 DISTI # 30737657	Infineon Technologies AG	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R RoHS: Compliant	4475	36:$0.7233
BSZ0909NSATMA1 DISTI # SP000832568	Infineon Technologies AG	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON T/R (Alt: SP000832568) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.1579 30000:€0.1699 20000:€0.1839 10000:€0.2009 5000:€0.2459
BSZ0909NSXT DISTI # BSZ0909NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON - Tape and Reel (Alt: BSZ0909NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.1579 30000:$0.1609 20000:$0.1669 10000:$0.1729 5000:$0.1799
BSZ0909NSATMA1 DISTI # 12AC9457	Infineon Technologies AG	MOSFET, N-CH, 34V, 36A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes	966	1000:$0.2860 500:$0.3580 250:$0.4200 100:$0.4830 50:$0.5310 25:$0.5780 10:$0.6260 1:$0.7170
BSZ0909NS DISTI # 726-BSZ0909NS	Infineon Technologies AG	MOSFET N-Ch 30V 36A TDSON-8 OptiMOS RoHS: Compliant	1425	1:$0.5800 10:$0.4850 100:$0.3130 1000:$0.2510 5000:$0.2120 10000:$0.2040 25000:$0.1960
BSZ0909NSATMA1 DISTI # 2709925	Infineon Technologies AG	MOSFET, N-CH, 34V, 36A, TSDSON RoHS: Compliant	966	1000:$0.4330 500:$0.5410 100:$0.7310 10:$0.9470 1:$1.0900
BSZ0909NSATMA1 DISTI # 2709925	Infineon Technologies AG	MOSFET, N-CH, 34V, 36A, TSDSON	1106	500:£0.1630 250:£0.1910 100:£0.2180 25:£0.2520 5:£0.2840

Image	Part #	Description
	Mfr.#: BSZ0909NDXTMA1 OMO.#: OMO-BSZ0909NDXTMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSZ0909NS OMO.#: OMO-BSZ0909NS	MOSFET N-Ch 30V 36A TDSON-8 OptiMOS
	Mfr.#: BSZ0909ND OMO.#: OMO-BSZ0909ND-1190	DUAL N-CHANNEL OPTIMOS MOSFET (Alt: BSZ0909ND)
	Mfr.#: BSZ0909ND(SP001637282) OMO.#: OMO-BSZ0909ND-SP001637282--1190	New and Original
	Mfr.#: BSZ0909NDXTMA1 OMO.#: OMO-BSZ0909NDXTMA1-INFINEON-TECHNOLOGIES	MOSFET 2 N-CH 30V 20A WISON-8
	Mfr.#: BSZ0909NS OMO.#: OMO-BSZ0909NS-1190	Trans MOSFET N-CH 34V 9A 8-Pin TSDSON T/R (Alt: BSZ0909NS)
	Mfr.#: BSZ0909NS G OMO.#: OMO-BSZ0909NS-G-1190	New and Original
	Mfr.#: BSZ0909NSATMA1 OMO.#: OMO-BSZ0909NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 34V 9A 8TSDSON
	Mfr.#: BSZ0909NSG OMO.#: OMO-BSZ0909NSG-1190	New and Original

BSZ0909NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes