SI4160DY-T1-GE3

Mfr. #:: SI4160DY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 30V 25.4A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4160DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI4160DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Packaging: Reel

Part-Aliases: SI4160DY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: SOIC-Narrow-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single Quad Drain Triple Source

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 2.5 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 12 ns

Rise-Time: 16 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 25.4 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 5.1 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 28 ns

Typical-Turn-On-Delay-Time: 25 ns

Forward-Transconductance-Min: 60 S

Channel-Mode: Enhancement

Tags: SI4160DY-T1, SI4160DY-T, SI4160D, SI4160, SI416, SI41, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4160DY-T1-GE3 Description

***th Star Micro: Transistor MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R

***ure Electronics: N-CH MOSFET SO-8 BWL 30V 4.9MOHM @10V- LEAD(PB) AND HALOGEN FREE

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.4A; On Resistance Rds(On):0.004Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

SI4160DY-T1-GE3 More Information

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4160DY-T1-GE3 DISTI # V72:2272_09215537	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant	2915	1000:$0.4999 500:$0.7375 250:$0.7698 100:$0.8553 25:$1.0051 10:$1.1168 1:$1.4841
SI4160DY-T1-GE3 DISTI # V36:1790_09215537	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant	0	2500:$0.5318
SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1302In Stock	1000:$0.6327 500:$0.8014 100:$0.9701 10:$1.2440 1:$1.3900
SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1302In Stock	1000:$0.6327 500:$0.8014 100:$0.9701 10:$1.2440 1:$1.3900
SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.5242 5000:$0.5446 2500:$0.5733
SI4160DY-T1-GE3 DISTI # 25789831	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant	2915	17:$1.4841
SI4160DY-T1-GE3 DISTI # 31043808	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.4894
SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 25000	25000:$0.4273 15000:$0.4391 10000:$0.4516 5000:$0.4708 2500:$0.4852
SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.4819 15000:€0.5039 10000:€0.5699 5000:€0.7019 2500:€0.9789
SI4160DY-T1-GE3 DISTI # 05W6940	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 25.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	500:$0.7650 250:$0.8620 100:$1.0300 50:$1.1400 25:$1.2600 10:$1.3900 1:$1.4700
SI4160DY-T1-GE3. DISTI # 15AC0296	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: Yes	27500	25000:$0.4410 15000:$0.4530 10000:$0.4660 5000:$0.4850 1:$0.5000
SI4160DY-T1-GE3 DISTI # 781-SI4160DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	2392	1:$1.3600 10:$1.1200 100:$0.8610 500:$0.7410 1000:$0.5840 2500:$0.5450 5000:$0.5180 10000:$0.4990
SI4160DY-T1-GE3	Vishay Intertechnologies		1776
SI4160DY-T1-GE3	Vishay Intertechnologies		140
SI4160DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 2500	2500:$0.5550 5000:$0.5240 10000:$0.5080 20000:$0.4970

Image	Part #	Description
	Mfr.#: SI4160DY-T1-GE3 OMO.#: OMO-SI4160DY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4160DY OMO.#: OMO-SI4160DY-1190	New and Original
	Mfr.#: SI4160DY-T1 OMO.#: OMO-SI4160DY-T1-1190	New and Original
	Mfr.#: SI4160DY-T1-E3 OMO.#: OMO-SI4160DY-T1-E3-1190	New and Original
	Mfr.#: SI4160DY-T1-GE3 OMO.#: OMO-SI4160DY-T1-GE3-VISHAY	MOSFET N-CH 30V 25.4A 8-SOIC
	Mfr.#: SI4160DY-TI-GE3 OMO.#: OMO-SI4160DY-TI-GE3-1190	New and Original
	Mfr.#: SI4160DY-T1-GE3-CUT TAPE OMO.#: OMO-SI4160DY-T1-GE3-CUT-TAPE-1190	New and Original

SI4160DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes