NDF06N62ZG

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

620 V

Id - Continuous Drain Current:

3.8 A

Rds On - Drain-Source Resistance:

980 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

32 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

31 W

Configuration:

Single

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

5 S

Product Type:

MOSFET

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Unit Weight:

0.211644 oz

Tags

NDF06N6, NDF06N, NDF06, NDF0, NDF