We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
Part # | Mfg. | Description | Stock | Price |
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BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 424In Stock |
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BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 424In Stock |
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BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSC047N08NS3G DISTI # BSC047N08NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
BSC047N08NS3G DISTI # BSC047N08NS3G | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP - Bulk (Alt: BSC047N08NS3G) RoHS: Compliant Min Qty: 317 Container: Bulk | Americas - 0 |
|
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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BSC047N08NS3GATMA1 DISTI # SP000436372 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R (Alt: SP000436372) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
BSC047N08NS3GATMA1. DISTI # 31AC8216 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:80V,On Resistance Rds(on):4.7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:125W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
BSC047N08NS3 G DISTI # 60R2492 | Infineon Technologies AG | MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 8634 |
|
BSC047N08NS3 G DISTI # 726-BSC047N08NS3G | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 9359 |
|
BSC047N08NS3GATMA1 DISTI # 726-BSC047N08NS3GATM | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 3804 |
|
BSC047N08NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 21 |
|
BSC047N08NS3GATMA1 DISTI # 9064347P | Infineon Technologies AG | MOSFET N-CHANNEL 80V 18A TDSON8 EP, RL | 3080 |
|
BSC047N08NS3G | Infineon Technologies AG | 96 | ||
BSC047N08NS3 G DISTI # TMOSP9587 | Infineon Technologies AG | N-CH80V 100A4.7mOhm TDSON-8 RoHS: Compliant | Stock DE - 5000Stock HK - 0Stock US - 0 |
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BSC047N08NS3 G DISTI # 1775444 | Infineon Technologies AG | MOSFET, N CH, 100A, 80V, PG-TDSON-8 | 8651 |
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BSC047N08NS3 G DISTI # 1775444 | Infineon Technologies AG | MOSFET, N CH, 100A, 80V, PG-TDSON-8 RoHS: Compliant | 13636 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: 047N OMO.#: OMO-047N-1190 |
New and Original | |
Mfr.#: 047N06N OMO.#: OMO-047N06N-1190 |
New and Original | |
Mfr.#: 047N08NS OMO.#: OMO-047N08NS-1190 |
New and Original | |
Mfr.#: 047N08NS/BSC047N08NS3G |
New and Original | |
Mfr.#: 047N08NS3 OMO.#: OMO-047N08NS3-1190 |
New and Original | |
Mfr.#: 047N08NSG OMO.#: OMO-047N08NSG-1190 |
New and Original |