HGTG12N60A4D

Mfr. #:: HGTG12N60A4D
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors 600V N-Channel IGBT SMPS Series
Lifecycle:: New from this manufacturer.
Datasheet:: HGTG12N60A4D Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: E

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 54 A

Pd - Power Dissipation:: 167 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: HGTG12N60A4D

Packaging:: Tube

Continuous Collector Current Ic Max:: 54 A

Height:: 20.82 mm

Length:: 15.87 mm

Width:: 4.82 mm

Brand:: ON Semiconductor / Fairchild

Continuous Collector Current:: 60 A

Gate-Emitter Leakage Current:: +/- 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 450

Subcategory:: IGBTs

Part # Aliases:: HGTG12N60A4D_NL

Unit Weight:: 0.225401 oz

Tags: HGTG12N60A4D, HGTG12N60A, HGTG12N, HGTG12, HGTG1, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG12N60A4D Description

***eco: 600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode

***ical: Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfas

***p One Stop Global: Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247

***et: PWR IGBT 12A,600V,SMPS SERIES N-CH W/DIODE TO-247

***ser: IGBTs 600V, N-Channel IGBT SMPS Series

***o-Tech: Transistor IGBT N-Ch 600V 54A TO247

***i-Key: IGBT N-CH SMPS 600V 54A TO247

***ark: Pt P To247 600V Smps Rohs Compliant: Yes

***Semiconductor: 600V, SMPS IGBT

***rchild Semiconductor: The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***nell: IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; Device Marking:HGTG12N60A4D; No. of Pins:3; Power, Pd:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:16ns; Transistors, No. of:1

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

Part #	Mfg.	Description	Stock	Price
HGTG12N60A4D DISTI # V99:2348_06359064	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail	265	500:$2.2090 250:$2.4550 100:$2.5410 50:$2.8230 25:$3.1370 10:$3.2320 1:$4.0502
HGTG12N60A4D DISTI # V36:1790_06359064	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail	57	500:$2.2090 250:$2.4550 100:$2.5410 50:$2.8230 25:$3.1370 10:$3.2320 1:$4.0502
HGTG12N60A4D DISTI # HGTG12N60A4D-ND	ON Semiconductor	IGBT 600V 54A 167W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	277In Stock	5400:$1.3163 2700:$1.3327 900:$1.7276 450:$1.9744 25:$2.4680 10:$2.6160 1:$2.9100
HGTG12N60A4D DISTI # 30302967	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail	265	5:$4.0502
HGTG12N60A4D DISTI # 33650743	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail	57	5:$4.0502
HGTG12N60A4D DISTI # HGTG12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG12N60A4D) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 420	150:$1.3900 300:$1.3900 60:$1.4900 90:$1.4900 30:$1.5900
HGTG12N60A4D DISTI # HGTG12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60A4D) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.0149 500:€1.0529 100:€1.0929 50:€1.1369 25:€1.1849 10:€1.2919 1:€1.4219
HGTG12N60A4D DISTI # HGTG12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG12N60A4D) RoHS: Compliant Min Qty: 175 Container: Bulk	Americas - 0	1750:$1.6900 175:$1.7900 350:$1.7900 525:$1.7900 875:$1.7900
HGTG12N60A4D DISTI # HGTG12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG12N60A4D) RoHS: Compliant Min Qty: 450	Asia - 0	22500:$1.9667 11250:$2.0000 4500:$2.0345 2250:$2.1071 1350:$2.1852 900:$2.2692 450:$2.3600
HGTG12N60A4D DISTI # 58K1585	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1585) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$3.0200 250:$3.1900 100:$3.3500 50:$3.5200 25:$3.6800 10:$3.8500 1:$4.2800
HGTG12N60A4D DISTI # 58K1585	ON Semiconductor	IGBT, 600V,54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	358	500:$3.0200 250:$3.1900 100:$3.3500 50:$3.5200 25:$3.6800 10:$3.8500 1:$4.2800
HGTG12N60A4D DISTI # 05M3502	ON Semiconductor	IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 RoHS Compliant: Yes	15570	500:$1.7500 250:$1.8100 100:$2.1600 50:$2.4900 25:$2.6600 10:$3.0300 1:$3.5000
HGTG12N60A4D. DISTI # 84AC1732	ON Semiconductor	PT P TO247 600V SMPS ROHS COMPLIANT: YES	420	500:$3.0200 250:$3.1900 100:$3.3500 50:$3.5200 25:$3.7600 10:$3.9300 1:$4.3700
HGTG12N60A4D DISTI # 512-HGTG12N60A4D	ON Semiconductor	IGBT Transistors 600V N-Channel IGBT SMPS Series RoHS: Compliant	0
HGTG12N60A4D	ON Semiconductor	RoHS: Not Compliant	2070	1000:$1.2500 500:$1.3200 100:$1.3700 25:$1.4300 1:$1.5400
HGTG12N60A4D	Harris Semiconductor		10
HGTG12N60A4D DISTI # HGTG12N60A4D	ON Semiconductor	Transistor: IGBT,600V,23A,167W,TO247-3	476	150:$1.4500 30:$1.7100 10:$1.8800 3:$2.2100 1:$2.3500
HGTG12N60A4D DISTI # 1057677	ON Semiconductor	IGBT, TO-247	18608	500:£1.9000 250:£2.1200 100:£2.4200 10:£2.7200 1:£3.4100
HGTG12N60A4D DISTI # 1057677	ON Semiconductor	IGBT, TO-247 RoHS: Compliant	19341	1350:$3.0500 900:$3.6200 450:$4.0300 10:$5.1900 1:$5.7700
HGTG12N60A4D DISTI # XSKDRABS0006133	ON SEMICONDUCTOR	RoHS: Compliant	2544 in Stock0 on Order	2544:$2.1300 450:$2.2900

HGTG12N60A4D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes