HGTG12N60A4D vs HGTG12N60A4D 12N60A4D vs HGTG12N60A4D,12N60A4D,12

 
PartNumberHGTG12N60A4DHGTG12N60A4D 12N60A4DHGTG12N60A4D,12N60A4D,12
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS Series
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSE--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C54 A--
Pd Power Dissipation167 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTG12N60A4D--
PackagingTube--
Continuous Collector Current Ic Max54 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current60 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesHGTG12N60A4D_NL--
Unit Weight0.225401 oz--
Top