BSM080D12P2C008

Mfr. #:: BSM080D12P2C008
Manufacturer:: Rohm Semiconductor
Description:: Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
Lifecycle:: New from this manufacturer.
Datasheet:: BSM080D12P2C008 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BSM080D12P2C008 more Information

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: Discrete Semiconductor Modules

RoHS:: Y

Product:: Power Semiconductor Modules

Type:: SiC Power MOSFET

Vgs - Gate-Source Voltage:: - 6 V, 22 V

Mounting Style:: Screw Mount

Package / Case:: Module

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: BSMx

Packaging:: Tray

Configuration:: Half Bridge

Brand:: ROHM Semiconductor

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Typical Delay Time:: 20 ns

Fall Time:: 40 ns

Id - Continuous Drain Current:: 80 A

Pd - Power Dissipation:: 600 W

Product Type:: Discrete Semiconductor Modules

Rise Time:: 30 ns

Factory Pack Quantity:: 12

Subcategory:: Discrete Semiconductor Modules

Typical Turn-Off Delay Time:: 80 ns

Typical Turn-On Delay Time:: 20 ns

Vds - Drain-Source Breakdown Voltage:: 1200 V

Vgs th - Gate-Source Threshold Voltage:: 1.6 V

Part # Aliases:: BSM080D12P2C008

Tags: BSM0, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM080D12P2C008 More Information

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SiC Power Modules: ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Market price

Part #	Mfg.	Description	Stock	Price
BSM080D12P2C008 DISTI # V99:2348_18338525	ROHM Semiconductor	BSM080D12P2C008	5	12:$299.6900 1:$301.4000
BSM080D12P2C008 DISTI # BSM080D12P2C008-ND	ROHM Semiconductor	SIC POWER MODULE-1200V-80A RoHS: Compliant Min Qty: 1 Container: Tray	18In Stock	12:$297.4858 1:$301.7400
BSM080D12P2C008 DISTI # 33952737	ROHM Semiconductor	BSM080D12P2C008	12	1:$508.7500
BSM080D12P2C008 DISTI # 26098825	ROHM Semiconductor	BSM080D12P2C008	5	1:$301.4000
BSM080D12P2C008 DISTI # BSM080D12P2C008	ROHM Semiconductor	Trans MOSFET N 1200V 80A 4-Pin Case C Tray (Alt: BSM080D12P2C008) RoHS: Compliant Min Qty: 1 Container: Case	Europe - 0	1000:€277.3900 500:€286.8900 100:€297.1900 50:€308.1900 25:€319.9900 10:€332.7900 1:€346.6900
BSM080D12P2C008 DISTI # BSM080D12P2C008	ROHM Semiconductor	Trans MOSFET N 1200V 80A 4-Pin Case C Tray - Trays (Alt: BSM080D12P2C008) RoHS: Compliant Min Qty: 12 Container: Tray	Americas - 0	120:$255.9900 72:$262.2900 48:$268.8900 24:$275.8900 12:$279.4900
BSM080D12P2C008 DISTI # 755-BSM080D12P2C008	ROHM Semiconductor	Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V RoHS: Compliant	33	1:$354.1500
BSM080D12P2C008 DISTI # C1S625901686177	ROHM Semiconductor	Trans MOSFET N-CH SiC 1.2KV 80A 10-Pin Tray RoHS: Compliant	12	10:$336.0000 5:$360.0000 1:$407.0000
BSM080D12P2C008 DISTI # TMOS1315	ROHM Semiconductor	SiC Power Module 80A 1200V RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	12:$333.6000
BSM080D12P2C008	ROHM Semiconductor	Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V RoHS: Compliant	Americas -

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Availability

Stock:: 32
On Order:: 2015
Enter Quantity:

Current price of BSM080D12P2C008 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$354.15~~; ~~$354.15~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BSM080D12P2C008

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes