IPB090N06N3GATMA1

IPB090N06N3GATMA1
Mfr. #:
IPB090N06N3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
IPB090N06N3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Subcategory:
MOSFETs
Part # Aliases:
G IPB090N06N3 IPB9N6N3GXT SP000398042
Unit Weight:
0.139332 oz
Tags
IPB090, IPB09, IPB0, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 9 mOhm 36 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Part # Mfg. Description Stock Price
IPB090N06N3GATMA1
DISTI # V72:2272_06384657
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
473
  • 250:$0.7398
  • 100:$0.7473
  • 25:$0.9646
  • 10:$1.0716
  • 1:$1.2131
IPB090N06N3GATMA1
DISTI # V36:1790_06384657
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.3640
  • 500000:$0.3644
  • 100000:$0.4040
  • 10000:$0.4793
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.4200
  • 5000:$0.4364
  • 2000:$0.4594
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # 27089772
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
473
  • 21:$1.2131
IPB090N06N3GATMA1
DISTI # SP000398042
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 22800
  • 10000:€0.3159
  • 6000:€0.3409
  • 4000:€0.3689
  • 2000:€0.4029
  • 1000:€0.4919
IPB090N06N3GXT
DISTI # IPB090N06N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.3169
  • 6000:$0.3229
  • 4000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPB090N06N3 G
DISTI # 726-IPB090N06N3G
Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
1019
  • 1:$1.0200
  • 10:$0.8750
  • 100:$0.6720
  • 500:$0.5940
  • 1000:$0.4690
  • 2000:$0.4160
  • 10000:$0.4010
IPB090N06N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
2000
  • 1000:$0.3200
  • 500:$0.3300
  • 100:$0.3500
  • 25:$0.3600
  • 1:$0.3900
IPB090N06N3GATMA1
DISTI # 8269529P
Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL775
  • 1000:£0.3370
  • 500:£0.4250
  • 250:£0.4810
  • 50:£0.5540
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-341
  • 1000:$0.4257
  • 100:$0.4572
  • 10:$0.5270
  • 3:$0.6553
  • 1:$0.7615
IPB090N06N3GATMA1
DISTI # 1775550
Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31790
  • 500:£0.4680
  • 250:£0.5360
  • 100:£0.6030
  • 25:£0.7630
  • 5:£0.9400
Image Part # Description
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G

MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1

MOSFET MV POWER MOS
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G-1190

IPB090N06N3 G
IPB090N06N3G

Mfr.#: IPB090N06N3G

OMO.#: OMO-IPB090N06N3G-1190

Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 50A TO263-3
IPB090N06N3GATMA1 , 2SD1

Mfr.#: IPB090N06N3GATMA1 , 2SD1

OMO.#: OMO-IPB090N06N3GATMA1-2SD1-1190

New and Original
IPB090N06N3GS

Mfr.#: IPB090N06N3GS

OMO.#: OMO-IPB090N06N3GS-1190

New and Original
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IPB090N06N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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