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TK560P60Y,RQ

TK560P60Y,RQ
Mfr. #:
TK560P60Y,RQ
Manufacturer:
Toshiba
Description:
MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A
Lifecycle:
New from this manufacturer.
Datasheet:
TK560P60Y,RQ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK560P60Y,RQ DatasheetTK560P60Y,RQ Datasheet (P4-P6)TK560P60Y,RQ Datasheet (P7-P9)TK560P60Y,RQ Datasheet (P10)
ECAD Model:
More Information:
TK560P60Y,RQ more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DPAK-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
430 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
14.5 nC
Minimum Operating Temperature:
-
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
60 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSV
Packaging:
Reel
Series:
TK560P60Y
Transistor Type:
1 N-Channel
Brand:
Toshiba
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
105 ns
Typical Turn-On Delay Time:
50 ns
Tags
TK560P60, TK560P, TK560, TK56, TK5
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
***et
Power MOSFET N-Channel 600V 7A 3-Pin DPAK T/R
DTMOS V Super Junction MOSFETs
Toshiba DTMOS V Super Junction MOSFETs are the next generation of N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOS V operates with lower EMI noise, and a 17% reduction On Resistance RDS(ON) compared to the DTMOS IV MOSFETs. The DTMOS V has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOS V Super Junction MOSFETs are ideal to improve the performance, and facilitate the design of power conversion applications. Applications that include switching power supplies, power factor correction (PFC) designs, and LED lighting. Learn More
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of TK560P60Y,RQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.54
$1.54
10
$1.23
$12.30
100
$1.08
$108.00
500
$0.84
$418.50
1000
$0.66
$661.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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