 |  | | |
| PartNumber | TK560P60Y,RQ | TK560A60Y,S4X | TK560A65Y,S4X |
| Description | MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A | MOSFET N-Ch DTMOSV 600V 30W 380pF 7.0A | MOSFET N-Ch DTMOSV 650V 30W 380pF 7.0A |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | DPAK-3 | TO-220SIS-3 | TO-220SIS-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
| Id Continuous Drain Current | 7 A | 7 A | 7 A |
| Rds On Drain Source Resistance | 430 mOhms | 430 mOhms | 430 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 14.5 nC | 14.5 nC | 14.5 nC |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 60 W | 30 W | 30 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | DTMOSV | DTMOSV | DTMOSV |
| Packaging | Reel | Tube | Tube |
| Series | TK560P60Y | TK560A60Y | TK560A65Y |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 2000 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 105 ns | 105 ns | 105 ns |
| Typical Turn On Delay Time | 50 ns | 50 ns | 50 ns |
| Unit Weight | - | 0.068784 oz | 0.068784 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK560P60Y,RQ | MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A | |
| TK560P65Y,RQ | MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A | ||
| TK56E12N1,S1X | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | ||
| TK56A12N1,S4X | MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V | ||
| TK560A60Y,S4X | MOSFET N-Ch DTMOSV 600V 30W 380pF 7.0A | ||
| TK560A65Y,S4X | MOSFET N-Ch DTMOSV 650V 30W 380pF 7.0A | ||
| TK56E12N1,S1X | IGBT Transistors MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | ||
| TK56A12N1,S4X | MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V | ||
| TK56E12N1S1XS | New and Original | ||
| TK560A60Y | New and Original | ||
| TK560A65YS4X | New and Original | ||
| TK560P60YRQ | New and Original | ||
| TK560P65Y | New and Original | ||
| TK560P65YRQ | New and Original | ||
| TK56A12N1 | New and Original | ||
| TK56A12N1,S4X(S | New and Original | ||
| TK56A12N1,TK5A60D | New and Original | ||
| TK56A12N1-S4X | New and Original | ||
| TK56A12N1S4X | Power Field-Effect Transistor, 100A I(D), 120V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| TK56A12N1S4X(S | New and Original | ||
| TK56A1N1 | New and Original | ||
| TK56E12N1 | New and Original | ||
| TK56E12N1 K56E12N1 | New and Original | ||
| TK56E12N1,S1X(S | New and Original | ||
| TK56E12N1S1X | Trans MOSFET N 120V 112A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK56E12N1,S1X) | ||
| TK56E12N1S1X(S | New and Original | ||
| TK560A60YS4X-ND | New and Original | ||
| TK560A65YS4X-ND | New and Original | ||
| TK560P60YRQCT-ND | New and Original | ||
| TK560P60YRQDKR-ND | New and Original | ||
| TK560P60YRQTR-ND | New and Original | ||
| TK560P65YRQCT-ND | New and Original | ||
| TK560P65YRQDKR-ND | New and Original | ||
| TK560P65YRQTR-ND | New and Original | ||
| TK56A12N1S4X-ND | New and Original | ||
| TK56E12N1S1X-ND | New and Original |